Interfacial engineering of ferromagnetism in wafer-scale van der Waals Fe4GeTe2 far above room temperature

Hangtian Wang, Haichang Lu (), Zongxia Guo, Ang Li, Peichen Wu, Jing Li, Weiran Xie, Zhimei Sun, Peng Li, Héloïse Damas, Anna Maria Friedel, Sylvie Migot, Jaafar Ghanbaja, Luc Moreau, Yannick Fagot-Revurat, Sébastien Petit-Watelot, Thomas Hauet, John Robertson, Stéphane Mangin (), Weisheng Zhao () and Tianxiao Nie ()
Additional contact information
Hangtian Wang: Beihang University
Haichang Lu: Beihang University
Zongxia Guo: Beihang University
Ang Li: Beihang University
Peichen Wu: Beihang University
Jing Li: Beihang University
Weiran Xie: Beihang University
Zhimei Sun: Beihang University
Peng Li: Auburn University
Héloïse Damas: Institut Jean Lamour
Anna Maria Friedel: Institut Jean Lamour
Sylvie Migot: Institut Jean Lamour
Jaafar Ghanbaja: Institut Jean Lamour
Luc Moreau: Institut Jean Lamour
Yannick Fagot-Revurat: Institut Jean Lamour
Sébastien Petit-Watelot: Institut Jean Lamour
Thomas Hauet: Institut Jean Lamour
John Robertson: Cambridge University
Stéphane Mangin: Institut Jean Lamour
Weisheng Zhao: Beihang University
Tianxiao Nie: Beihang University

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract Despite recent advances in exfoliated vdW ferromagnets, the widespread application of 2D magnetism requires a Curie temperature (Tc) above room temperature as well as a stable and controllable magnetic anisotropy. Here we demonstrate a large-scale iron-based vdW material Fe4GeTe2 with the Tc reaching ~530 K. We confirmed the high-temperature ferromagnetism by multiple characterizations. Theoretical calculations suggested that the interface-induced right shift of the localized states for unpaired Fe d electrons is the reason for the enhanced Tc, which was confirmed by ultraviolet photoelectron spectroscopy. Moreover, by precisely tailoring Fe concentration we achieved arbitrary control of magnetic anisotropy between out-of-plane and in-plane without inducing any phase disorders. Our finding sheds light on the high potential of Fe4GeTe2 in spintronics, which may open opportunities for room-temperature application of all-vdW spintronic devices.

Date: 2023
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DOI: 10.1038/s41467-023-37917-8

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