Manipulating exchange bias in 2D magnetic heterojunction for high-performance robust memory applications

Xinyu Huang, Luman Zhang, Lei Tong, Zheng Li, Zhuiri Peng, Runfeng Lin, Wenhao Shi, Kan-Hao Xue, Hongwei Dai, Hui Cheng, Danilo de Camargo Branco, Jianbin Xu, Junbo Han (), Gary J. Cheng (), Xiangshui Miao () and Lei Ye ()
Additional contact information
Xinyu Huang: Huazhong University of Science and Technology
Luman Zhang: Huazhong University of Science and Technology
Lei Tong: Huazhong University of Science and Technology
Zheng Li: Huazhong University of Science and Technology
Zhuiri Peng: Huazhong University of Science and Technology
Runfeng Lin: Huazhong University of Science and Technology
Wenhao Shi: Huazhong University of Science and Technology
Kan-Hao Xue: Huazhong University of Science and Technology
Hongwei Dai: Huazhong University of Science and Technology
Hui Cheng: Huazhong University of Science and Technology
Danilo de Camargo Branco: Purdue University
Jianbin Xu: The Chinese University of Hong Kong
Junbo Han: Huazhong University of Science and Technology
Gary J. Cheng: Purdue University
Xiangshui Miao: Huazhong University of Science and Technology
Lei Ye: Huazhong University of Science and Technology

Nature Communications, 2023, vol. 14, issue 1, 1-10

Abstract: Abstract The exchange bias (EB) effect plays an undisputed role in the development of highly sensitive, robust, and high-density spintronic devices in magnetic data storage. However, the weak EB field, low blocking temperature, as well as the lack of modulation methods, seriously limit the application of EB in van der Waals (vdW) spintronic devices. Here, we utilized pressure engineering to tune the vdW spacing of the two-dimensional (2D) FePSe3/Fe3GeTe2 heterostructures. The EB field (HEB, from 29.2 mT to 111.2 mT) and blocking temperature (Tb, from 20 K to 110 K) are significantly enhanced, and a highly sensitive and robust spin valve is demonstrated. Interestingly, this enhancement of the EB effect was extended to exposed Fe3GeTe2, due to the single-domain nature of Fe3GeTe2. Our findings provide opportunities for the producing, exploring, and tuning of magnetic vdW heterostructures with strong interlayer coupling, thereby enabling customized 2D spintronic devices in the future.

Date: 2023
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DOI: 10.1038/s41467-023-37918-7

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