Van der Waals nanomesh electronics on arbitrary surfaces

You Meng, Xiaocui Li, Xiaolin Kang, Wanpeng Li, Wei Wang, Zhengxun Lai, Weijun Wang, Quan Quan, Xiuming Bu, SenPo Yip, Pengshan Xie, Dong Chen, Dengji Li, Fei Wang (), Chi-Fung Yeung, Changyong Lan, Chuntai Liu, Lifan Shen, Yang Lu, Furong Chen, Chun-Yuen Wong () and Johnny C. Ho ()
Additional contact information
You Meng: City University of Hong Kong
Xiaocui Li: City University of Hong Kong
Xiaolin Kang: City University of Hong Kong
Wanpeng Li: City University of Hong Kong
Wei Wang: City University of Hong Kong
Zhengxun Lai: City University of Hong Kong
Weijun Wang: City University of Hong Kong
Quan Quan: City University of Hong Kong
Xiuming Bu: City University of Hong Kong
SenPo Yip: Kyushu University
Pengshan Xie: City University of Hong Kong
Dong Chen: City University of Hong Kong
Dengji Li: City University of Hong Kong
Fei Wang: Fine Mechanics and Physics, Chinese Academy of Sciences
Chi-Fung Yeung: City University of Hong Kong
Changyong Lan: University of Electronic Science and Technology of China
Chuntai Liu: Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education
Lifan Shen: Beijing University of Technology
Yang Lu: City University of Hong Kong
Furong Chen: City University of Hong Kong
Chun-Yuen Wong: City University of Hong Kong
Johnny C. Ho: City University of Hong Kong

Nature Communications, 2023, vol. 14, issue 1, 1-14

Abstract: Abstract Chemical bonds, including covalent and ionic bonds, endow semiconductors with stable electronic configurations but also impose constraints on their synthesis and lattice-mismatched heteroepitaxy. Here, the unique multi-scale van der Waals (vdWs) interactions are explored in one-dimensional tellurium (Te) systems to overcome these restrictions, enabled by the vdWs bonds between Te atomic chains and the spontaneous misfit relaxation at quasi-vdWs interfaces. Wafer-scale Te vdWs nanomeshes composed of self-welding Te nanowires are laterally vapor grown on arbitrary surfaces at a low temperature of 100 °C, bringing greater integration freedoms for enhanced device functionality and broad applicability. The prepared Te vdWs nanomeshes can be patterned at the microscale and exhibit high field-effect hole mobility of 145 cm2/Vs, ultrafast photoresponse below 3 μs in paper-based infrared photodetectors, as well as controllable electronic structure in mixed-dimensional heterojunctions. All these device metrics of Te vdWs nanomesh electronics are promising to meet emerging technological demands.

Date: 2023
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DOI: 10.1038/s41467-023-38090-8

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