Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

Li Zhai, Sara T. Gebre, Bo Chen, Dan Xu, Junze Chen, Zijian Li, Yawei Liu, Hua Yang, Chongyi Ling, Yiyao Ge, Wei Zhai, Changsheng Chen, Lu Ma, Qinghua Zhang, Xuefei Li, Yujie Yan, Xinyu Huang, Lujiang Li, Zhiqiang Guan, Chen-Lei Tao, Zhiqi Huang, Hongyi Wang, Jinze Liang, Ye Zhu, Chun-Sing Lee, Peng Wang, Chunfeng Zhang, Lin Gu, Yonghua Du, Tianquan Lian (), Hua Zhang () and Xue-Jun Wu ()
Additional contact information
Li Zhai: Nanjing University
Sara T. Gebre: Emory University
Bo Chen: City University of Hong Kong
Dan Xu: Nanjing University
Junze Chen: Sichuan University
Zijian Li: City University of Hong Kong
Yawei Liu: Emory University
Hua Yang: City University of Hong Kong
Chongyi Ling: City University of Hong Kong
Yiyao Ge: City University of Hong Kong
Wei Zhai: City University of Hong Kong
Changsheng Chen: The Hong Kong Polytechnic University
Lu Ma: Brookhaven National Laboratory
Qinghua Zhang: Chinese Academy of Sciences
Xuefei Li: Nanjing University
Yujie Yan: Nanjing University
Xinyu Huang: Nanjing University
Lujiang Li: City University of Hong Kong
Zhiqiang Guan: City University of Hong Kong
Chen-Lei Tao: Nanjing University
Zhiqi Huang: City University of Hong Kong
Hongyi Wang: City University of Hong Kong
Jinze Liang: City University of Hong Kong
Ye Zhu: The Hong Kong Polytechnic University
Chun-Sing Lee: City University of Hong Kong
Peng Wang: Nanjing University
Chunfeng Zhang: Nanjing University
Lin Gu: Tsinghua University
Yonghua Du: Brookhaven National Laboratory
Tianquan Lian: Emory University
Hua Zhang: City University of Hong Kong
Xue-Jun Wu: Nanjing University

Nature Communications, 2023, vol. 14, issue 1, 1-10

Abstract: Abstract Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.

Date: 2023
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DOI: 10.1038/s41467-023-38237-7

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