Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface

Xuexi Yan, Yixiao Jiang, Qianqian Jin, Tingting Yao, Weizhen Wang, Ang Tao, Chunyang Gao, Xiang Li, Chunlin Chen (), Hengqiang Ye and Xiu-Liang Ma ()
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Xuexi Yan: Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China
Yixiao Jiang: Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China
Qianqian Jin: Guangxi University of Science and Technology
Tingting Yao: Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China
Weizhen Wang: Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China
Ang Tao: Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China
Chunyang Gao: Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China
Xiang Li: Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China
Chunlin Chen: Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China
Hengqiang Ye: Ji Hua Laboratory
Xiu-Liang Ma: Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China

Nature Communications, 2023, vol. 14, issue 1, 1-7

Abstract: Abstract Incoherent interfaces with large mismatches usually exhibit very weak interfacial interactions so that they rarely generate intriguing interfacial properties. Here we demonstrate unexpected strong interfacial interactions at the incoherent AlN/Al2O3 (0001) interface with a large mismatch by combining transmission electron microscopy, first-principles calculations, and cathodoluminescence spectroscopy. It is revealed that strong interfacial interactions have significantly tailored the interfacial atomic structure and electronic properties. Misfit dislocation networks and stacking faults are formed at this interface, which is rarely observed at other incoherent interfaces. The band gap of the interface reduces significantly to ~ 3.9 eV due to the competition between the elongated Al-N and Al-O bonds across the interface. Thus this incoherent interface can generate a very strong interfacial ultraviolet light emission. Our findings suggest that incoherent interfaces can exhibit strong interfacial interactions and unique interfacial properties, thereby opening an avenue for the development of related heterojunction materials and devices.

Date: 2023
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DOI: 10.1038/s41467-023-38548-9

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