Field-free spin-orbit torque switching via out-of-plane spin-polarization induced by an antiferromagnetic insulator/heavy metal interface

Mengxi Wang, Jun Zhou, Xiaoguang Xu (), Tanzhao Zhang, Zhiqiang Zhu, Zhixian Guo, Yibo Deng, Ming Yang (), Kangkang Meng, Bin He, Jialiang Li, Guoqiang Yu, Tao Zhu, Ang Li, Xiaodong Han and Yong Jiang ()
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Mengxi Wang: University of Science and Technology Beijing
Jun Zhou: Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03
Xiaoguang Xu: University of Science and Technology Beijing
Tanzhao Zhang: University of Science and Technology Beijing
Zhiqiang Zhu: University of Science and Technology Beijing
Zhixian Guo: University of Science and Technology Beijing
Yibo Deng: University of Science and Technology Beijing
Ming Yang: The Hong Kong Polytechnic University
Kangkang Meng: University of Science and Technology Beijing
Bin He: Chinese Academy of Sciences
Jialiang Li: Chinese Academy of Sciences
Guoqiang Yu: Chinese Academy of Sciences
Tao Zhu: Chinese Academy of Sciences
Ang Li: Beijing University of Technology
Xiaodong Han: Beijing University of Technology
Yong Jiang: University of Science and Technology Beijing

Nature Communications, 2023, vol. 14, issue 1, 1-10

Abstract: Abstract Manipulating spin polarization orientation is challenging but crucial for field-free spintronic devices. Although such manipulation has been demonstrated in a limited number of antiferromagnetic metal-based systems, the inevitable shunting effects from the metallic layer can reduce the overall device efficiency. In this study, we propose an antiferromagnetic insulator-based heterostructure NiO/Ta/Pt/Co/Pt for such spin polarization control without any shunting effect in the antiferromagnetic layer. We show that zero-field magnetization switching can be realized and is related to the out-of-plane component of spin polarization modulated by the NiO/Pt interface. The zero-field magnetization switching ratio can be effectively tuned by the substrates, in which the easy axis of NiO can be manipulated by the tensile or compressive strain from the substrates. Our work demonstrates that the insulating antiferromagnet based heterostructure is a promising platform to enhance the spin-orbital torque efficiency and achieve field-free magnetization switching, thus opening an avenue towards energy-efficient spintronic devices.

Date: 2023
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DOI: 10.1038/s41467-023-38550-1

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