Bimodal ionic photomemristor based on a high-temperature oxide superconductor/semiconductor junction

Ralph El Hage, Vincent Humbert, Victor Rouco, Gabriel Sánchez-Santolino, Aurelien Lagarrigue, Kevin Seurre, Santiago J. Carreira, Anke Sander, Jérôme Charliac, Salvatore Mesoraca, Juan Trastoy, Javier Briatico, Jacobo Santamaría and Javier E. Villegas ()
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Ralph El Hage: Université Paris-Saclay
Vincent Humbert: Université Paris-Saclay
Victor Rouco: Université Paris-Saclay
Gabriel Sánchez-Santolino: Universidad Complutense de Madrid
Aurelien Lagarrigue: Université Paris-Saclay
Kevin Seurre: Université Paris-Saclay
Santiago J. Carreira: Université Paris-Saclay
Anke Sander: Université Paris-Saclay
Jérôme Charliac: CNRS, Ecole Polytechnique
Salvatore Mesoraca: Université Paris-Saclay
Juan Trastoy: Université Paris-Saclay
Javier Briatico: Université Paris-Saclay
Jacobo Santamaría: Université Paris-Saclay
Javier E. Villegas: Université Paris-Saclay

Nature Communications, 2023, vol. 14, issue 1, 1-10

Abstract: Abstract Memristors, a cornerstone for neuromorphic electronics, respond to the history of electrical stimuli by varying their electrical resistance across a continuum of states. Much effort has been recently devoted to developing an analogous response to optical excitation. Here we realize a novel tunnelling photo-memristor whose behaviour is bimodal: its resistance is determined by the dual electrical-optical history. This is obtained in a device of ultimate simplicity: an interface between a high-temperature superconductor and a transparent semiconductor. The exploited mechanism is a reversible nanoscale redox reaction between both materials, whose oxygen content determines the electron tunnelling rate across their interface. The redox reaction is optically driven via an interplay between electrochemistry, photovoltaic effects and photo-assisted ion migration. Besides their fundamental interest, the unveiled electro-optic memory effects have considerable technological potential. Especially in combination with high-temperature superconductivity which, in addition to facilitating low-dissipation connectivity, brings photo-memristive effects to the realm of superconducting electronics.

Date: 2023
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DOI: 10.1038/s41467-023-38608-0

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