Multi-state data storage in a two-dimensional stripy antiferromagnet implemented by magnetoelectric effect

Pingfan Gu, Cong Wang, Dan Su, Zehao Dong, Qiuyuan Wang, Zheng Han, Kenji Watanabe, Takashi Taniguchi, Wei Ji (), Young Sun () and Yu Ye ()
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Pingfan Gu: Peking University
Cong Wang: Renmin University of China
Dan Su: Institute of Physics
Zehao Dong: Peking University
Qiuyuan Wang: Peking University
Zheng Han: Institute of Optoelectronics
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Wei Ji: Renmin University of China
Young Sun: Chongqing University
Yu Ye: Peking University

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract A promising approach to the next generation of low-power, functional, and energy-efficient electronics relies on novel materials with coupled magnetic and electric degrees of freedom. In particular, stripy antiferromagnets often exhibit broken crystal and magnetic symmetries, which may bring about the magnetoelectric (ME) effect and enable the manipulation of intriguing properties and functionalities by electrical means. The demand for expanding the boundaries of data storage and processing technologies has led to the development of spintronics toward two-dimensional (2D) platforms. This work reports the ME effect in the 2D stripy antiferromagnetic insulator CrOCl down to a single layer. By measuring the tunneling resistance of CrOCl on the parameter space of temperature, magnetic field, and applied voltage, we verified the ME coupling down to the 2D limit and probed its mechanism. Utilizing the multi-stable states and ME coupling at magnetic phase transitions, we realize multi-state data storage in the tunneling devices. Our work not only advances the fundamental understanding of spin-charge coupling, but also demonstrates the great potential of 2D antiferromagnetic materials to deliver devices and circuits beyond the traditional binary operations.

Date: 2023
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DOI: 10.1038/s41467-023-39004-4

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