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A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform

Mikhail Churaev, Rui Ning Wang, Annina Riedhauser, Viacheslav Snigirev, Terence Blésin, Charles Möhl, Miles H. Anderson, Anat Siddharth, Youri Popoff, Ute Drechsler, Daniele Caimi, Simon Hönl, Johann Riemensberger, Junqiu Liu, Paul Seidler () and Tobias J. Kippenberg ()
Additional contact information
Mikhail Churaev: Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)
Rui Ning Wang: Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)
Annina Riedhauser: IBM Research - Europe, Zurich
Viacheslav Snigirev: Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)
Terence Blésin: Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)
Charles Möhl: IBM Research - Europe, Zurich
Miles H. Anderson: Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)
Anat Siddharth: Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)
Youri Popoff: IBM Research - Europe, Zurich
Ute Drechsler: IBM Research - Europe, Zurich
Daniele Caimi: IBM Research - Europe, Zurich
Simon Hönl: IBM Research - Europe, Zurich
Johann Riemensberger: Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)
Junqiu Liu: Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)
Paul Seidler: IBM Research - Europe, Zurich
Tobias J. Kippenberg: Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL)

Nature Communications, 2023, vol. 14, issue 1, 1-9

Abstract: Abstract The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence of fully integrated LiNbO3 electro-optic devices. Yet to date, LiNbO3 photonic integrated circuits have mostly been fabricated using non-standard etching techniques and partially etched waveguides, that lack the reproducibility achieved in silicon photonics. Widespread application of thin-film LiNbO3 requires a reliable solution with precise lithographic control. Here we demonstrate a heterogeneously integrated LiNbO3 photonic platform employing wafer-scale bonding of thin-film LiNbO3 to silicon nitride (Si3N4) photonic integrated circuits. The platform maintains the low propagation loss (

Date: 2023
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-39047-7

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DOI: 10.1038/s41467-023-39047-7

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