Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films

Kohei Fujiwara (), Yasuyuki Kato, Hitoshi Abe, Shun Noguchi, Junichi Shiogai, Yasuhiro Niwa, Hiroshi Kumigashira, Yukitoshi Motome and Atsushi Tsukazaki
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Kohei Fujiwara: Tohoku University
Yasuyuki Kato: University of Tokyo
Hitoshi Abe: High Energy Accelerator Research Organization (KEK)
Shun Noguchi: Tohoku University
Junichi Shiogai: Tohoku University
Yasuhiro Niwa: High Energy Accelerator Research Organization (KEK)
Hiroshi Kumigashira: High Energy Accelerator Research Organization (KEK)
Yukitoshi Motome: University of Tokyo
Atsushi Tsukazaki: Tohoku University

Nature Communications, 2023, vol. 14, issue 1, 1-7

Abstract: Abstract Amorphous semiconductors are widely applied to electronic and energy-conversion devices owing to their high performance and simple fabrication processes. The topological concept of the Berry curvature is generally ill-defined in amorphous solids, due to the absence of long-range crystalline order. Here, we demonstrate that the Berry curvature in the short-range crystalline order of kagome-lattice fragments effectively contributes to the anomalous electrical and magneto-thermoelectric properties in Fe–Sn amorphous films. The Fe–Sn films on glass substrates exhibit large anomalous Hall and Nernst effects comparable to those of the single crystals of topological semimetals Fe3Sn2 and Fe3Sn. With modelling, we reveal that the Berry curvature contribution in the amorphous state likely originates from randomly distributed kagome-lattice fragments. This microscopic interpretation sheds light on the topology of amorphous materials, which may lead to the realization of functional topological amorphous electronic devices.

Date: 2023
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DOI: 10.1038/s41467-023-39112-1

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