Prediction of sub-pyramid texturing as the next step towards high efficiency silicon heterojunction solar cells

Feihong Chu, Xianlin Qu, Yongcai He, Wenling Li, Xiaoqing Chen, Zilong Zheng (), Miao Yang, Xiaoning Ru, Fuguo Peng, Minghao Qu, Kun Zheng (), Xixiang Xu (), Hui Yan and Yongzhe Zhang ()
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Feihong Chu: Beijing University of Technology
Xianlin Qu: Nanjing University of Aeronautics and Astronautics
Yongcai He: Beijing University of Technology
Wenling Li: Beijing University of Technology
Xiaoqing Chen: Beijing University of Technology
Zilong Zheng: Beijing University of Technology
Miao Yang: LONGi Central R&D Institute
Xiaoning Ru: LONGi Central R&D Institute
Fuguo Peng: LONGi Central R&D Institute
Minghao Qu: LONGi Central R&D Institute
Kun Zheng: Beijing University of Technology
Xixiang Xu: LONGi Central R&D Institute
Hui Yan: Beijing University of Technology
Yongzhe Zhang: Beijing University of Technology

Nature Communications, 2023, vol. 14, issue 1, 1-7

Abstract: Abstract The interfacial morphology of crystalline silicon/hydrogenated amorphous silicon (c-Si/a-Si:H) is a key success factor to approach the theoretical efficiency of Si-based solar cells, especially Si heterojunction technology. The unexpected crystalline silicon epitaxial growth and interfacial nanotwins formation remain a challenging issue for silicon heterojunction technology. Here, we design a hybrid interface by tuning pyramid apex-angle to improve c-Si/a-Si:H interfacial morphology in silicon solar cells. The pyramid apex-angle (slightly smaller than 70.53°) consists of hybrid (111)0.9/(011)0.1 c-Si planes, rather than pure (111) planes in conventional texture pyramid. Employing microsecond-long low-temperature (500 K) molecular dynamic simulations, the hybrid (111)/(011) plane prevents from both c-Si epitaxial growth and nanotwin formation. More importantly, given there is not any additional industrial preparation process, the hybrid c-Si plane could improve c-Si/a-Si:H interfacial morphology for a-Si passivated contacts technique, and wide-applied for all silicon-based solar cells as well.

Date: 2023
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DOI: 10.1038/s41467-023-39342-3

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