Low power flexible monolayer MoS2 integrated circuits

Jian Tang, Qinqin Wang, Jinpeng Tian, Xiaomei Li, Na Li, Yalin Peng, Xiuzhen Li, Yanchong Zhao, Congli He, Shuyu Wu, Jiawei Li, Yutuo Guo, Biying Huang, Yanbang Chu, Yiru Ji, Dashan Shang, Luojun Du, Rong Yang, Wei Yang, Xuedong Bai, Dongxia Shi and Guangyu Zhang ()
Additional contact information
Jian Tang: Chinese Academy of Sciences
Qinqin Wang: Chinese Academy of Sciences
Jinpeng Tian: Chinese Academy of Sciences
Xiaomei Li: Chinese Academy of Sciences
Na Li: Chinese Academy of Sciences
Yalin Peng: Chinese Academy of Sciences
Xiuzhen Li: Chinese Academy of Sciences
Yanchong Zhao: Chinese Academy of Sciences
Congli He: Beijing Normal University
Shuyu Wu: Chinese Academy of Sciences
Jiawei Li: Chinese Academy of Sciences
Yutuo Guo: Chinese Academy of Sciences
Biying Huang: Chinese Academy of Sciences
Yanbang Chu: Chinese Academy of Sciences
Yiru Ji: Chinese Academy of Sciences
Dashan Shang: Chinese Academy of Sciences
Luojun Du: Chinese Academy of Sciences
Rong Yang: Chinese Academy of Sciences
Wei Yang: Chinese Academy of Sciences
Xuedong Bai: Chinese Academy of Sciences
Dongxia Shi: Chinese Academy of Sciences
Guangyu Zhang: Chinese Academy of Sciences

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract Monolayer molybdenum disulfide (ML-MoS2) is an emergent two-dimensional (2D) semiconductor holding potential for flexible integrated circuits (ICs). The most important demands for the application of such ML-MoS2 ICs are low power consumption and high performance. However, these are currently challenging to satisfy due to limitations in the material quality and device fabrication technology. In this work, we develop an ultra-thin high-κ dielectric/metal gate fabrication technique for the realization of thin film transistors based on high-quality wafer scale ML-MoS2 on both rigid and flexible substrates. The rigid devices can be operated in the deep-subthreshold regime with low power consumption and show negligible hysteresis, sharp subthreshold slope, high current density, and ultra-low leakage currents. Moreover, we realize fully functional large-scale flexible ICs operating at voltages below 1 V. Our process could represent a key step towards using energy-efficient flexible ML-MoS2 ICs in portable, wearable, and implantable electronics.

Date: 2023
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DOI: 10.1038/s41467-023-39390-9

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