A reconfigurable binary/ternary logic conversion-in-memory based on drain-aligned floating-gate heterojunction transistors

Chungryeol Lee, Changhyeon Lee, Seungmin Lee, Junhwan Choi, Hocheon Yoo () and Sung Gap Im ()
Additional contact information
Chungryeol Lee: Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Changhyeon Lee: Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Seungmin Lee: Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST)
Junhwan Choi: Department of Chemical Engineering, Dankook University
Hocheon Yoo: Department of Electronic Engineering, Gachon University
Sung Gap Im: Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST)

Nature Communications, 2023, vol. 14, issue 1, 1-11

Abstract: Abstract A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned floating gate. In the H-MTR, a reliable transition between N-shaped transfer curves with distinct NTC and monolithically current-increasing transfer curves without apparent NTC can be accomplished through programming operation. Based on the H-MTR, a binary/ternary reconfigurable logic inverter (R-inverter) has been successfully implemented, which showed an unprecedentedly high static noise margin of 85% for binary logic operation and 59% for ternary logic operation, as well as long-term stability and outstanding cycle endurance. Furthermore, a ternary/binary dynamic logic conversion-in-memory has been demonstrated using a serially-connected R-inverter chain. The ternary/binary dynamic logic conversion-in-memory could generate three different output logic sequences for the same input signal in three logic levels, which is a new logic computing method that has never been presented before.

Date: 2023
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-023-39394-5 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-39394-5

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-023-39394-5

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().