Robust negative longitudinal magnetoresistance and spin–orbit torque in sputtered Pt3Sn and Pt3SnxFe1-x topological semimetal

Delin Zhang (), Wei Jiang, Hwanhui Yun, Onri Jay Benally, Thomas Peterson, Zach Cresswell, Yihong Fan, Yang Lv, Guichuan Yu, Javier Garcia Barriocanal, Przemyslaw Wojciech Swatek, K. Andre Mkhoyan, Tony Low () and Jian-Ping Wang ()
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Delin Zhang: University of Minnesota
Wei Jiang: University of Minnesota
Hwanhui Yun: University of Minnesota
Onri Jay Benally: University of Minnesota
Thomas Peterson: University of Minnesota
Zach Cresswell: University of Minnesota
Yihong Fan: University of Minnesota
Yang Lv: University of Minnesota
Guichuan Yu: University of Minnesota
Javier Garcia Barriocanal: University of Minnesota
Przemyslaw Wojciech Swatek: University of Minnesota
K. Andre Mkhoyan: University of Minnesota
Tony Low: University of Minnesota
Jian-Ping Wang: University of Minnesota

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Here, we fabricate highly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputtering technology. Systematic angular dependence (both in-plane and out-of-plane) study of magnetoresistance presents surprisingly robust quadratic and linear negative longitudinal magnetoresistance features for Pt3Sn and Pt3SnxFe1-x, respectively. We attribute the anomalous negative longitudinal magnetoresistance to the type-II Dirac semimetal phase (pristine Pt3Sn) and/or the formation of tunable Weyl semimetal phases through symmetry breaking processes, such as magnetic-atom doping, as confirmed by first-principles calculations. Furthermore, Pt3Sn and Pt3SnxFe1-x show the promising performance for facilitating the development of advanced spin-orbit torque devices. These results extend our understanding of chiral anomaly of topological semimetals and can pave the way for exploring novel topological materials for spintronic devices.

Date: 2023
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DOI: 10.1038/s41467-023-39408-2

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