Colloid driven low supersaturation crystallization for atomically thin Bismuth halide perovskite

Lutao Li, Junjie Yao, Juntong Zhu, Yuan Chen, Chen Wang, Zhicheng Zhou, Guoxiang Zhao, Sihan Zhang, Ruonan Wang, Jiating Li, Xiangyi Wang, Zheng Lu, Lingbo Xiao, Qiang Zhang and Guifu Zou ()
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Lutao Li: Soochow University
Junjie Yao: Soochow University
Juntong Zhu: Soochow University
Yuan Chen: Shandong University of Science and Technology
Chen Wang: Shandong University of Science and Technology
Zhicheng Zhou: Soochow University
Guoxiang Zhao: Soochow University
Sihan Zhang: Soochow University
Ruonan Wang: Soochow University
Jiating Li: Soochow University
Xiangyi Wang: Soochow University
Zheng Lu: Soochow University
Lingbo Xiao: Soochow University
Qiang Zhang: Shandong University of Science and Technology
Guifu Zou: Soochow University

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract It is challenging to grow atomically thin non-van der Waals perovskite due to the strong electronic coupling between adjacent layers. Here, we present a colloid-driven low supersaturation crystallization strategy to grow atomically thin Cs3Bi2Br9. The colloid solution drives low-concentration solute in a supersaturation state, contributing to initial heterogeneous nucleation. Simultaneously, the colloids provide a stable precursor source in the low-concentration solute. The surfactant is absorbed in specific crystal nucleation facet resulting in the anisotropic growth of planar dominance. Ionic perovskite Cs3Bi2Br9 is readily grown from monolayered to six-layered Cs3Bi2Br9 corresponding to thicknesses of 0.7, 1.6, 2.7, 3.6, 4.6 and 5.7 nm. The atomically thin Cs3Bi2Br9 presents layer-dependent nonlinear optical performance and stacking-induced second harmonic generation. This work provides a concept for growing atomically thin halide perovskite with non-van der Waal structures and demonstrates potential application for atomically thin single crystals’ growth with strong electronic coupling between adjacent layers.

Date: 2023
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DOI: 10.1038/s41467-023-39445-x

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