Achieving near-perfect light absorption in atomically thin transition metal dichalcogenides through band nesting

Seungjun Lee, Dongjea Seo, Sang Hyun Park, Nezhueytl Izquierdo, Eng Hock Lee, Rehan Younas, Guanyu Zhou, Milan Palei, Anthony J. Hoffman, Min Seok Jang, Christopher L. Hinkle, Steven J. Koester () and Tony Low ()
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Seungjun Lee: University of Minnesota
Dongjea Seo: University of Minnesota
Sang Hyun Park: University of Minnesota
Nezhueytl Izquierdo: University of Minnesota
Eng Hock Lee: University of Minnesota
Rehan Younas: University of Notre Dame
Guanyu Zhou: University of Notre Dame
Milan Palei: University of Notre Dame
Anthony J. Hoffman: University of Notre Dame
Min Seok Jang: Korea Advanced Institute of Science and Technology
Christopher L. Hinkle: University of Notre Dame
Steven J. Koester: University of Minnesota
Tony Low: University of Minnesota

Nature Communications, 2023, vol. 14, issue 1, 1-9

Abstract: Abstract Near-perfect light absorbers (NPLAs), with absorbance, $${{{{{{{\mathcal{A}}}}}}}}$$ A , of at least 99%, have a wide range of applications ranging from energy and sensing devices to stealth technologies and secure communications. Previous work on NPLAs has mainly relied upon plasmonic structures or patterned metasurfaces, which require complex nanolithography, limiting their practical applications, particularly for large-area platforms. Here, we use the exceptional band nesting effect in TMDs, combined with a Salisbury screen geometry, to demonstrate NPLAs using only two or three uniform atomic layers of transition metal dichalcogenides (TMDs). The key innovation in our design, verified using theoretical calculations, is to stack monolayer TMDs in such a way as to minimize their interlayer coupling, thus preserving their strong band nesting properties. We experimentally demonstrate two feasible routes to controlling the interlayer coupling: twisted TMD bi-layers and TMD/buffer layer/TMD tri-layer heterostructures. Using these approaches, we demonstrate room-temperature values of $${{{{{{{\mathcal{A}}}}}}}}$$ A =95% at λ=2.8 eV with theoretically predicted values as high as 99%. Moreover, the chemical variety of TMDs allows us to design NPLAs covering the entire visible range, paving the way for efficient atomically-thin optoelectronics.

Date: 2023
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DOI: 10.1038/s41467-023-39450-0

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