Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

Yaoqiang Zhou, Lei Tong, Zefeng Chen, Li Tao, Yue Pang and Jian-Bin Xu ()
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Yaoqiang Zhou: The Chinese University of Hong Kong
Lei Tong: The Chinese University of Hong Kong
Zefeng Chen: Soochow University
Li Tao: School of Physics, Beijing Institute of Technology
Yue Pang: The Chinese University of Hong Kong
Jian-Bin Xu: The Chinese University of Hong Kong

Nature Communications, 2023, vol. 14, issue 1, 1-10

Abstract: Abstract Two-dimensional (2D) materials have been considered promising candidates for future low power-dissipation and reconfigurable integrated circuit applications. However, 2D transistors with intrinsic ambipolar transport polarity are usually affected by large off-state leakage currents and small on/off ratios. Here, we report the realization of a reconfigurable Schottky junction field-effect transistor (SJFET) in an asymmetric van der Waals contact geometry, showing a balanced and switchable n- and p-unipolarity with the Ids on/off ratio kept >106. Meanwhile, the static leakage power consumption was suppressed to 10−5 nW. The SJFET worked as a reversible Schottky rectifier with an ideality factor of ~1.0 and a tuned rectifying ratio from 3 × 106 to 2.5 × 10−6. This empowered the SJFET with a reconfigurable photovoltaic performance in which the sign of the open-circuit voltage and photo-responsivity were substantially switched. This polarity-reversible SJFET paves an alternative way to develop reconfigurable 2D devices for low-power-consumption photovoltaic logic circuits.

Date: 2023
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DOI: 10.1038/s41467-023-39705-w

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