Controlled alignment of supermoiré lattice in double-aligned graphene heterostructures

Junxiong Hu, Junyou Tan, Mohammed M. Al Ezzi, Udvas Chattopadhyay, Jian Gou, Yuntian Zheng, Zihao Wang, Jiayu Chen, Reshmi Thottathil, Jiangbo Luo, Kenji Watanabe, Takashi Taniguchi, Andrew Thye Shen Wee, Shaffique Adam and A. Ariando ()
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Junxiong Hu: National University of Singapore
Junyou Tan: Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore
Mohammed M. Al Ezzi: National University of Singapore
Udvas Chattopadhyay: National University of Singapore
Jian Gou: National University of Singapore
Yuntian Zheng: National University of Singapore
Zihao Wang: National University of Singapore
Jiayu Chen: National University of Singapore
Reshmi Thottathil: National University of Singapore
Jiangbo Luo: National University of Singapore
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Andrew Thye Shen Wee: National University of Singapore
Shaffique Adam: National University of Singapore
A. Ariando: National University of Singapore

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract The supermoiré lattice, built by stacking two moiré patterns, provides a platform for creating flat mini-bands and studying electron correlations. An ultimate challenge in assembling a graphene supermoiré lattice is in the deterministic control of its rotational alignment, which is made highly aleatory due to the random nature of the edge chirality and crystal symmetry. Employing the so-called “golden rule of three”, here we present an experimental strategy to overcome this challenge and realize the controlled alignment of double-aligned hBN/graphene/hBN supermoiré lattice, where the twist angles between graphene and top/bottom hBN are both close to zero. Remarkably, we find that the crystallographic edge of neighboring graphite can be used to better guide the stacking alignment, as demonstrated by the controlled production of 20 moiré samples with an accuracy better than ~ 0.2°. Finally, we extend our technique to low-angle twisted bilayer graphene and ABC-stacked trilayer graphene, providing a strategy for flat-band engineering in these moiré materials.

Date: 2023
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DOI: 10.1038/s41467-023-39893-5

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