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Surface coupling in Bi2Se3 ultrathin films by screened Coulomb interaction

Jia-nan Liu, Xu Yang, Haopu Xue, Xue-song Gai, Rui Sun, Yang Li, Zi-Zhao Gong, Na Li, Zong-Kai Xie, Wei He, Xiang-Qun Zhang, Desheng Xue and Zhao-Hua Cheng ()
Additional contact information
Jia-nan Liu: Institute of Physics Chinese Academy of Sciences
Xu Yang: Institute of Physics Chinese Academy of Sciences
Haopu Xue: Institute of Physics Chinese Academy of Sciences
Xue-song Gai: Institute of Physics Chinese Academy of Sciences
Rui Sun: Institute of Physics Chinese Academy of Sciences
Yang Li: Institute of Physics Chinese Academy of Sciences
Zi-Zhao Gong: Institute of Physics Chinese Academy of Sciences
Na Li: Institute of Physics Chinese Academy of Sciences
Zong-Kai Xie: Institute of Physics Chinese Academy of Sciences
Wei He: Institute of Physics Chinese Academy of Sciences
Xiang-Qun Zhang: Institute of Physics Chinese Academy of Sciences
Desheng Xue: Lanzhou University
Zhao-Hua Cheng: Institute of Physics Chinese Academy of Sciences

Nature Communications, 2023, vol. 14, issue 1, 1-6

Abstract: Abstract Single-particle band theory has been very successful in describing the band structure of topological insulators. However, with decreasing thickness of topological insulator thin films, single-particle band theory is insufficient to explain their band structures and transport properties due to the existence of top and bottom surface-state coupling. Here, we reconstruct this coupling with an equivalently screened Coulomb interaction in Bi2Se3 ultrathin films. The thickness-dependent position of the Dirac point and the magnitude of the mass gap are discussed in terms of the Hartree approximation and the self-consistent gap equation. We find that for thicknesses below 6 quintuple layers, the magnitude of the mass gap is in good agreement with the experimental results. Our work provides a more accurate means of describing and predicting the behaviour of quasi-particles in ultrathin topological insulator films and stacked topological systems.

Date: 2023
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DOI: 10.1038/s41467-023-40035-0

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