Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric

Jiabiao Chen, Zhaochao Liu, Xinyue Dong, Zhansheng Gao, Yuxuan Lin, Yuyu He, Yingnan Duan, Tonghuai Cheng, Zhengyang Zhou, Huixia Fu, Feng Luo and Jinxiong Wu ()
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Jiabiao Chen: Nankai University
Zhaochao Liu: Nankai University
Xinyue Dong: Nankai University
Zhansheng Gao: Nankai University
Yuxuan Lin: Nankai University
Yuyu He: Nankai University
Yingnan Duan: Nankai University
Tonghuai Cheng: Nankai University
Zhengyang Zhou: Shanghai Institute of Ceramics, Chinese Academy of Sciences
Huixia Fu: Chongqing University
Feng Luo: Nankai University
Jinxiong Wu: Nankai University

Nature Communications, 2023, vol. 14, issue 1, 1-10

Abstract: Abstract Single-crystalline high-κ dielectric materials are desired for the development of future two-dimensional (2D) electronic devices. However, curent 2D gate insulators still face challenges, such as insufficient dielectric constant and difficult to obtain free-standing and transferrable ultrathin films. Here, we demonstrate that ultrathin Bi2SiO5 crystals grown by chemical vapor deposition (CVD) can serve as excellent gate dielectric layers for 2D semiconductors, showing a high dielectric constant (>30) and large band gap (~3.8 eV). Unlike other 2D insulators synthesized via in-plane CVD on substrates, vertically grown Bi2SiO5 can be easily transferred onto other substrates by polymer-free mechanical pressing, which greatly facilitates its ideal van der Waals integration with few-layer MoS2 as high-κ dielectrics and screening layers. The Bi2SiO5 gated MoS2 field-effect transistors exhibit an ignorable hysteresis (~3 mV) and low drain induced barrier lowering (~5 mV/V). Our work suggests vertically grown Bi2SiO5 nanoflakes as promising candidates to improve the performance of 2D electronic devices.

Date: 2023
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DOI: 10.1038/s41467-023-40123-1

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