Self-aligned patterning of tantalum oxide on Cu/SiO2 through redox-coupled inherently selective atomic layer deposition

Yicheng Li, Zilian Qi, Yuxiao Lan, Kun Cao (), Yanwei Wen, Jingming Zhang, Eryan Gu, Junzhou Long, Jin Yan, Bin Shan and Rong Chen ()
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Yicheng Li: Huazhong University of Science and Technology
Zilian Qi: Huazhong University of Science and Technology
Yuxiao Lan: Huazhong University of Science and Technology
Kun Cao: Huazhong University of Science and Technology
Yanwei Wen: Huazhong University of Science and Technology
Jingming Zhang: Huazhong University of Science and Technology
Eryan Gu: Huazhong University of Science and Technology
Junzhou Long: Huazhong University of Science and Technology
Jin Yan: Huazhong University of Science and Technology
Bin Shan: Huazhong University of Science and Technology
Rong Chen: Huazhong University of Science and Technology

Nature Communications, 2023, vol. 14, issue 1, 1-10

Abstract: Abstract Atomic-scale precision alignment is a bottleneck in the fabrication of next-generation nanoelectronics. In this study, a redox-coupled inherently selective atomic layer deposition (ALD) is introduced to tackle this challenge. The ‘reduction-adsorption-oxidation’ ALD cycles are designed by adding an in-situ reduction step, effectively inhibiting nucleation on copper. As a result, tantalum oxide exhibits selective deposition on various oxides, with no observable growth on Cu. Furthermore, the self-aligned TaOx is successfully deposited on Cu/SiO2 nanopatterns, avoiding excessive mushroom growth at the edges or the emergence of undesired nucleation defects within the Cu region. The film thickness on SiO2 exceeds 5 nm with a selectivity of 100%, marking it as one of the highest reported to date. This method offers a streamlined and highly precise self-aligned manufacturing technique, which is advantageous for the future downscaling of integrated circuits.

Date: 2023
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DOI: 10.1038/s41467-023-40249-2

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