Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes

Seunguk Song, Aram Yoon, Sora Jang, Jason Lynch, Jihoon Yang, Juwon Han, Myeonggi Choe, Young Ho Jin, Cindy Yueli Chen, Yeryun Cheon, Jinsung Kwak, Changwook Jeong, Hyeonsik Cheong, Deep Jariwala, Zonghoon Lee () and Soon-Yong Kwon ()
Additional contact information
Seunguk Song: Ulsan National Institute of Science and Technology (UNIST)
Aram Yoon: Ulsan National Institute of Science and Technology (UNIST)
Sora Jang: Ulsan National Institute of Science and Technology (UNIST)
Jason Lynch: University of Pennsylvania
Jihoon Yang: Ulsan National Institute of Science and Technology (UNIST)
Juwon Han: Ulsan National Institute of Science and Technology (UNIST)
Myeonggi Choe: Ulsan National Institute of Science and Technology (UNIST)
Young Ho Jin: Ulsan National Institute of Science and Technology (UNIST)
Cindy Yueli Chen: University of Pennsylvania
Yeryun Cheon: Sogang University
Jinsung Kwak: Ulsan National Institute of Science and Technology (UNIST)
Changwook Jeong: Ulsan National Institute of Science and Technology (UNIST)
Hyeonsik Cheong: Sogang University
Deep Jariwala: University of Pennsylvania
Zonghoon Lee: Ulsan National Institute of Science and Technology (UNIST)
Soon-Yong Kwon: Ulsan National Institute of Science and Technology (UNIST)

Nature Communications, 2023, vol. 14, issue 1, 1-14

Abstract: Abstract High-performance p-type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale p-type 2D semiconductors and a suitable metallization process represents important challenges that need to be addressed for future developments of the field. Here, we report the fabrication of scalable p-type 2D single-crystalline 2H-MoTe2 transistor arrays with Fermi-level-tuned 1T’-phase semimetal contact electrodes. By transforming polycrystalline 1T’-MoTe2 to 2H polymorph via abnormal grain growth, we fabricated 4-inch 2H-MoTe2 wafers with ultra-large single-crystalline domains and spatially-controlled single-crystalline arrays at a low temperature (~500 °C). Furthermore, we demonstrate on-chip transistors by lithographic patterning and layer-by-layer integration of 1T’ semimetals and 2H semiconductors. Work function modulation of 1T’-MoTe2 electrodes was achieved by depositing 3D metal (Au) pads, resulting in minimal contact resistance (~0.7 kΩ·μm) and near-zero Schottky barrier height (~14 meV) of the junction interface, and leading to high on-state current (~7.8 μA/μm) and on/off current ratio (~105) in the 2H-MoTe2 transistors.

Date: 2023
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DOI: 10.1038/s41467-023-40448-x

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