Universal radiation tolerant semiconductor

Alexander Azarov (), Javier García Fernández, Junlei Zhao, Flyura Djurabekova, Huan He, Ru He, Øystein Prytz, Lasse Vines, Umutcan Bektas, Paul Chekhonin, Nico Klingner, Gregor Hlawacek and Andrej Kuznetsov ()
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Alexander Azarov: University of Oslo, Centre for Materials Science and Nanotechnology
Javier García Fernández: University of Oslo, Centre for Materials Science and Nanotechnology
Junlei Zhao: Southern University of Science and Technology
Flyura Djurabekova: Department of Physics, University of Helsinki
Huan He: Department of Physics, University of Helsinki
Ru He: Department of Physics, University of Helsinki
Øystein Prytz: University of Oslo, Centre for Materials Science and Nanotechnology
Lasse Vines: University of Oslo, Centre for Materials Science and Nanotechnology
Umutcan Bektas: Helmholtz-Zentrum Dresden-Rossendorf
Paul Chekhonin: Helmholtz-Zentrum Dresden-Rossendorf
Nico Klingner: Helmholtz-Zentrum Dresden-Rossendorf
Gregor Hlawacek: Helmholtz-Zentrum Dresden-Rossendorf
Andrej Kuznetsov: University of Oslo, Centre for Materials Science and Nanotechnology

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta (γ/β) double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in γ-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the β-to-γ Ga2O3 transformation, as a function of the increased disorder in β-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that γ/β double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors.

Date: 2023
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DOI: 10.1038/s41467-023-40588-0

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