Revealing low-loss dielectric near-field modes of hexagonal boron nitride by photoemission electron microscopy

Yaolong Li, Pengzuo Jiang, Xiaying Lyu, Xiaofang Li, Huixin Qi, Jinglin Tang, Zhaohang Xue, Hong Yang, Guowei Lu, Quan Sun (), Xiaoyong Hu (), Yunan Gao () and Qihuang Gong
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Yaolong Li: Peking University
Pengzuo Jiang: Peking University
Xiaying Lyu: Peking University
Xiaofang Li: Peking University
Huixin Qi: Peking University
Jinglin Tang: Peking University
Zhaohang Xue: Peking University
Hong Yang: Peking University
Guowei Lu: Peking University
Quan Sun: Peking University Yangtze Delta Institute of Optoelectronics
Xiaoyong Hu: Peking University
Yunan Gao: Peking University
Qihuang Gong: Peking University

Nature Communications, 2023, vol. 14, issue 1, 1-7

Abstract: Abstract Low-loss dielectric modes are important features and functional bases of fundamental optical components in on-chip optical devices. However, dielectric near-field modes are challenging to reveal with high spatiotemporal resolution and fast direct imaging. Herein, we present a method to address this issue by applying time-resolved photoemission electron microscopy to a low-dimensional wide-bandgap semiconductor, hexagonal boron nitride (hBN). Taking a low-loss dielectric planar waveguide as a fundamental structure, static vector near-field vortices with different topological charges and the spatiotemporal evolution of waveguide modes are directly revealed. With the lowest-order vortex structure, strong nanofocusing in real space is realized, while near-vertical photoemission in momentum space and narrow spread in energy space are simultaneously observed due to the atomically flat surface of hBN and the small photoemission horizon set by the limited photon energies. Our approach provides a strategy for the realization of flat photoemission emitters.

Date: 2023
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DOI: 10.1038/s41467-023-40603-4

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