Exciton Superposition across Moiré States in a Semiconducting Moiré Superlattice

Zhen Lian, Dongxue Chen, Yuze Meng, Xiaotong Chen, Ying Su, Rounak Banerjee, Takashi Taniguchi, Kenji Watanabe, Sefaattin Tongay, Chuanwei Zhang, Yong-Tao Cui () and Su-Fei Shi ()
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Zhen Lian: Rensselaer Polytechnic Institute
Dongxue Chen: Rensselaer Polytechnic Institute
Yuze Meng: Rensselaer Polytechnic Institute
Xiaotong Chen: Rensselaer Polytechnic Institute
Ying Su: University of Texas
Rounak Banerjee: Arizona State University
Takashi Taniguchi: International Center for Materials Nanoarchitectonics, National Institute for Materials Science
Kenji Watanabe: Research Center for Functional Materials, National Institute for Materials Science
Sefaattin Tongay: Arizona State University
Chuanwei Zhang: University of Texas
Yong-Tao Cui: University of California
Su-Fei Shi: Rensselaer Polytechnic Institute

Nature Communications, 2023, vol. 14, issue 1, 1-7

Abstract: Abstract Moiré superlattices of semiconducting transition metal dichalcogenides enable unprecedented spatial control of electron wavefunctions, leading to emerging quantum states. The breaking of translational symmetry further introduces a new degree of freedom: high symmetry moiré sites of energy minima behaving as spatially separated quantum dots. We demonstrate the superposition between two moiré sites by constructing a trilayer WSe2/monolayer WS2 moiré heterojunction. The two moiré sites in the first layer WSe2 interfacing WS2 allow the formation of two different interlayer excitons, with the hole residing in either moiré site of the first layer WSe2 and the electron in the third layer WSe2. An electric field can drive the hybridization of either of the interlayer excitons with the intralayer excitons in the third WSe2 layer, realizing the continuous tuning of interlayer exciton hopping between two moiré sites and a superposition of the two interlayer excitons, distinctively different from the natural trilayer WSe2.

Date: 2023
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DOI: 10.1038/s41467-023-40783-z

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