Non-volatile optoelectronic memory based on a photosensitive dielectric

Rui Zhu (), Huili Liang, Shangfeng Liu, Ye Yuan, Xinqiang Wang, Francis Chi-Chung Ling, Andrej Kuznetsov, Guangyu Zhang and Zengxia Mei ()
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Rui Zhu: Songshan Lake Materials Laboratory
Huili Liang: Songshan Lake Materials Laboratory
Shangfeng Liu: Songshan Lake Materials Laboratory
Ye Yuan: Songshan Lake Materials Laboratory
Xinqiang Wang: Songshan Lake Materials Laboratory
Francis Chi-Chung Ling: The University of Hong Kong
Andrej Kuznetsov: University of Oslo
Guangyu Zhang: Songshan Lake Materials Laboratory
Zengxia Mei: Songshan Lake Materials Laboratory

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract Recently, the optoelectronic memory is capturing growing attention due to its integrated function of sense and memory as well as multilevel storage ability. Although tens of states have been reported in literature, there are still three obvious deficiencies in most of the optoelectronic memories: large programming voltage (>20 V), high optical power density (>1 mW cm−2), and poor compatibility originating from the over-reliance on channel materials. Here, we firstly propose an optoelectronic memory based on a new photosensitive dielectric (PSD) architecture. Data writing and erasing are realized by using an optical pulse to switch on the PSD. The unique design enables the memory to work with a programming voltage and optical power density as low as 4 V and 160 µW cm−2, respectively. Meanwhile, this device may be extended to different kinds of transistors for specific applications. Our discovery offers a brand-new direction for non-volatile optoelectronic memories with low energy consumption.

Date: 2023
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DOI: 10.1038/s41467-023-40938-y

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