Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors

Robert Tseng, Sung-Tsun Wang, Tanveer Ahmed, Yi-Yu Pan, Shih-Chieh Chen, Che-Chi Shih, Wu-Wei Tsai, Hai-Ching Chen, Chi-Chung Kei, Tsung-Te Chou, Wen-Ching Hung, Jyh-Chen Chen, Yi-Hou Kuo, Chun-Liang Lin, Wei-Yen Woon (), Szuya Sandy Liao and Lien Der-Hsien ()
Additional contact information
Robert Tseng: National Yang Ming Chiao Tung University
Sung-Tsun Wang: National Yang Ming Chiao Tung University
Tanveer Ahmed: National Yang Ming Chiao Tung University
Yi-Yu Pan: National Yang Ming Chiao Tung University
Shih-Chieh Chen: National Yang Ming Chiao Tung University
Che-Chi Shih: Taiwan Semiconductor Manufacturing Company
Wu-Wei Tsai: Taiwan Semiconductor Manufacturing Company
Hai-Ching Chen: Taiwan Semiconductor Manufacturing Company
Chi-Chung Kei: National Applied Research Laboratories
Tsung-Te Chou: National Applied Research Laboratories
Wen-Ching Hung: National Central University
Jyh-Chen Chen: National Central University
Yi-Hou Kuo: National Yang Ming Chiao Tung University
Chun-Liang Lin: National Yang Ming Chiao Tung University
Wei-Yen Woon: Taiwan Semiconductor Manufacturing Company
Szuya Sandy Liao: Taiwan Semiconductor Manufacturing Company
Lien Der-Hsien: National Yang Ming Chiao Tung University

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract The scaling of transistors with thinner channel thicknesses has led to a surge in research on two-dimensional (2D) and quasi-2D semiconductors. However, modulating the threshold voltage (VT) in ultrathin transistors is challenging, as traditional doping methods are not readily applicable. In this work, we introduce a optical-thermal method, combining ultraviolet (UV) illumination and oxygen annealing, to achieve broad-range VT tunability in ultrathin In2O3. This method can achieve both positive and negative VT tuning and is reversible. The modulation of sheet carrier density, which corresponds to VT shift, is comparable to that obtained using other doping and capacitive charging techniques in other ultrathin transistors, including 2D semiconductors. With the controllability of VT, we successfully demonstrate the realization of depletion-load inverter and multi-state logic devices, as well as wafer-scale VT modulation via an automated laser system, showcasing its potential for low-power circuit design and non-von Neumann computing applications.

Date: 2023
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-023-41041-y Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-41041-y

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-023-41041-y

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().