Layer-dependent exciton polarizability and the brightening of dark excitons in few-layer black phosphorus

Yuchen Lei, Junwei Ma, Jiaming Luo, Shenyang Huang, Boyang Yu, Chaoyu Song, Qiaoxia Xing, Fanjie Wang, Yuangang Xie, Jiasheng Zhang, Lei Mu, Yixuan Ma, Chong Wang and Hugen Yan ()
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Yuchen Lei: Fudan University
Junwei Ma: Fudan University
Jiaming Luo: Fudan University
Shenyang Huang: Fudan University
Boyang Yu: Fudan University
Chaoyu Song: Fudan University
Qiaoxia Xing: Fudan University
Fanjie Wang: Fudan University
Yuangang Xie: Fudan University
Jiasheng Zhang: Fudan University
Lei Mu: Fudan University
Yixuan Ma: Fudan University
Chong Wang: Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology
Hugen Yan: Fudan University

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract The evolution of excitons from 2D to 3D is of great importance in photo-physics, yet the layer-dependent exciton polarizability hasn’t been investigated in 2D semiconductors. Here, we determine the exciton polarizabilities for 3- to 11-layer black phosphorus—a direct bandgap semiconductor regardless of the thickness—through frequency-resolved photocurrent measurements on dual-gate devices and unveil the carrier screening effect in relatively thicker samples. By taking advantage of the broadband photocurrent spectra, we are also able to reveal the exciton response for higher-index subbands under the gate electrical field. Surprisingly, dark excitons are brightened with intensity even stronger than the allowed transitions above certain electrical field. Our study not only sheds light on the exciton evolution with sample thickness, but also paves a way for optoelectronic applications of few-layer BP in modulators, tunable photodetectors, emitters and lasers.

Date: 2023
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DOI: 10.1038/s41467-023-41126-8

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