Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking

Yuhan Liang, Di Yi, Tianxiang Nan, Shengsheng Liu, Le Zhao, Yujun Zhang, Hetian Chen, Teng Xu, Minyi Dai, Jia-Mian Hu, Ben Xu, Ji Shi, Wanjun Jiang (), Rong Yu () and Yuan-Hua Lin ()
Additional contact information
Yuhan Liang: Tsinghua University
Di Yi: Tsinghua University
Tianxiang Nan: Tsinghua University
Shengsheng Liu: Tsinghua University
Le Zhao: Tsinghua University
Yujun Zhang: Chinese Academy of Sciences
Hetian Chen: Tsinghua University
Teng Xu: Tsinghua University
Minyi Dai: University of Wisconsin–Madison
Jia-Mian Hu: University of Wisconsin–Madison
Ben Xu: Graduate School, China Academy of Engineering Physics
Ji Shi: Tokyo Institute of Technology
Wanjun Jiang: Tsinghua University
Rong Yu: Tsinghua University
Yuan-Hua Lin: Tsinghua University

Nature Communications, 2023, vol. 14, issue 1, 1-7

Abstract: Abstract Current induced spin-orbit torque (SOT) holds great promise for next generation magnetic-memory technology. Field-free SOT switching of perpendicular magnetization requires the breaking of in-plane symmetry, which can be artificially introduced by external magnetic field, exchange coupling or device asymmetry. Recently it has been shown that the exploitation of inherent crystal symmetry offers a simple and potentially efficient route towards field-free switching. However, applying this approach to the benchmark SOT materials such as ferromagnets and heavy metals is challenging. Here, we present a strategy to break the in-plane symmetry of Pt/Co heterostructures by designing the orientation of Burgers vectors of dislocations. We show that the lattice of Pt/Co is tilted by about 1.2° when the Burgers vector has an out-of-plane component. Consequently, a tilted magnetic easy axis is induced and can be tuned from nearly in-plane to out-of-plane, enabling the field-free SOT switching of perpendicular magnetization components at room temperature with a relatively low current density (~1011 A/m2) and excellent stability (> 104 cycles). This strategy is expected to be applicable to engineer a wide range of symmetry-related functionalities for future electronic and magnetic devices.

Date: 2023
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DOI: 10.1038/s41467-023-41163-3

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