Photoluminescence imaging of single photon emitters within nanoscale strain profiles in monolayer WSe2

Artem N. Abramov, Igor Y. Chestnov, Ekaterina S. Alimova, Tatiana Ivanova, Ivan S. Mukhin, Dmitry N. Krizhanovskii, Ivan A. Shelykh, Ivan V. Iorsh and Vasily Kravtsov ()
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Artem N. Abramov: ITMO University
Igor Y. Chestnov: ITMO University
Ekaterina S. Alimova: Peter The Great St. Petersburg Polytechnic University
Tatiana Ivanova: ITMO University
Ivan S. Mukhin: ITMO University
Dmitry N. Krizhanovskii: University of Sheffield
Ivan A. Shelykh: ITMO University
Ivan V. Iorsh: ITMO University
Vasily Kravtsov: ITMO University

Nature Communications, 2023, vol. 14, issue 1, 1-7

Abstract: Abstract Local deformation of atomically thin van der Waals materials provides a powerful approach to create site-controlled chip-compatible single-photon emitters (SPEs). However, the microscopic mechanisms underlying the formation of such strain-induced SPEs are still not fully clear, which hinders further efforts in their deterministic integration with nanophotonic structures for developing practical on-chip sources of quantum light. Here we investigate SPEs with single-photon purity up to 98% created in monolayer WSe2 via nanoindentation. Using photoluminescence imaging in combination with atomic force microscopy, we locate single-photon emitting sites on a deep sub-wavelength spatial scale and reconstruct the details of the surrounding local strain potential. The obtained results suggest that the origin of the observed single-photon emission is likely related to strain-induced spectral shift of dark excitonic states and their hybridization with localized states of individual defects.

Date: 2023
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DOI: 10.1038/s41467-023-41292-9

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