An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces

Zeya Li, Junwei Huang, Ling Zhou, Zian Xu, Feng Qin, Peng Chen, Xiaojun Sun, Gan Liu, Chengqi Sui, Caiyu Qiu, Yangfan Lu, Huiyang Gou, Xiaoxiang Xi, Toshiya Ideue (), Peizhe Tang (), Yoshihiro Iwasa and Hongtao Yuan ()
Additional contact information
Zeya Li: Nanjing University
Junwei Huang: Nanjing University
Ling Zhou: Nanjing University
Zian Xu: School of Materials Science and Engineering, Beihang University
Feng Qin: Nanjing University
Peng Chen: Nanjing University
Xiaojun Sun: Nanjing University
Gan Liu: Nanjing University
Chengqi Sui: Nanjing University
Caiyu Qiu: Nanjing University
Yangfan Lu: Chongqing University
Huiyang Gou: Center for High Pressure Science and Technology Advanced Research
Xiaoxiang Xi: Nanjing University
Toshiya Ideue: The University of Tokyo
Peizhe Tang: School of Materials Science and Engineering, Beihang University
Yoshihiro Iwasa: The University of Tokyo
Hongtao Yuan: Nanjing University

Nature Communications, 2023, vol. 14, issue 1, 1-9

Abstract: Abstract Van der Waals dielectrics are fundamental materials for condensed matter physics and advanced electronic applications. Most dielectrics host isotropic structures in crystalline or amorphous forms, and only a few studies have considered the role of anisotropic crystal symmetry in dielectrics as a delicate way to tune electronic properties of channel materials. Here, we demonstrate a layered anisotropic dielectric, SiP2, with non-symmorphic twofold-rotational C2 symmetry as a gate medium which can break the original threefold-rotational C3 symmetry of MoS2 to achieve unexpected linearly-polarized photoluminescence and anisotropic second harmonic generation at SiP2/MoS2 interfaces. In contrast to the isotropic behavior of pristine MoS2, a large conductance anisotropy with an anisotropy index up to 1000 can be achieved and modulated in SiP2-gated MoS2 transistors. Theoretical calculations reveal that the anisotropic moiré potential at such interfaces is responsible for the giant anisotropic conductance and optical response. Our results provide a strategy for generating exotic functionalities at dielectric/semiconductor interfaces via symmetry engineering.

Date: 2023
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DOI: 10.1038/s41467-023-41295-6

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