Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts

Jun Yu, Han Wang, Fuwei Zhuge (), Zirui Chen, Man Hu, Xiang Xu, Yuhui He, Ying Ma (), Xiangshui Miao and Tianyou Zhai ()
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Jun Yu: Huazhong University of Science and Technology
Han Wang: Huazhong University of Science and Technology
Fuwei Zhuge: Huazhong University of Science and Technology
Zirui Chen: Huazhong University of Science and Technology
Man Hu: Huazhong University of Science and Technology
Xiang Xu: Huazhong University of Science and Technology
Yuhui He: Huazhong University of Science and Technology
Ying Ma: Huazhong University of Science and Technology
Xiangshui Miao: Huazhong University of Science and Technology
Tianyou Zhai: Huazhong University of Science and Technology

Nature Communications, 2023, vol. 14, issue 1, 1-9

Abstract: Abstract As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the ‘speed-retention-endurance’ dilemma, their typical speed is limited to ~microseconds to milliseconds for program and erase operations, restricting their application in scenarios with high-speed data throughput. Here, by adopting metallic 1T-LixMoS2 as edge contact, we show that ultrafast (10–100 ns) and robust (endurance>106 cycles, retention>10 years) memory operation can be simultaneously achieved in a two-dimensional van der Waals heterostructure flash memory with 2H-MoS2 as semiconductor channel. We attribute the superior performance to the gate tunable Schottky barrier at the edge contact, which can facilitate hot carrier injection to the semiconductor channel and subsequent tunneling when compared to a conventional top contact with high density of defects at the metal interface. Our results suggest that contact engineering can become a strategy to further improve the performance of 2D flash memory devices and meet the increasing demands of high speed and reliable data storage.

Date: 2023
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DOI: 10.1038/s41467-023-41363-x

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