Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Jaeun Eom, In Hak Lee, Jung Yun Kee, Minhyun Cho, Jeongdae Seo, Hoyoung Suh, Hyung-Jin Choi, Yumin Sim, Shuzhang Chen, Hye Jung Chang, Seung-Hyub Baek, Cedomir Petrovic, Hyejin Ryu, Chaun Jang, Young Duck Kim, Chan-Ho Yang, Maeng-Je Seong, Jin Hong Lee (), Se Young Park () and Jun Woo Choi ()
Additional contact information
Jaeun Eom: Korea Institute of Science and Technology (KIST)
In Hak Lee: Korea Institute of Science and Technology (KIST)
Jung Yun Kee: Korea Institute of Science and Technology (KIST)
Minhyun Cho: Kyung Hee University
Jeongdae Seo: KAIST
Hoyoung Suh: Korea Institute of Science and Technology (KIST)
Hyung-Jin Choi: Korea Institute of Science and Technology (KIST)
Yumin Sim: Chung-Ang University
Shuzhang Chen: Brookhaven National Laboratory
Hye Jung Chang: Korea Institute of Science and Technology (KIST)
Seung-Hyub Baek: Korea Institute of Science and Technology (KIST)
Cedomir Petrovic: Brookhaven National Laboratory
Hyejin Ryu: Korea Institute of Science and Technology (KIST)
Chaun Jang: Korea Institute of Science and Technology (KIST)
Young Duck Kim: Kyung Hee University
Chan-Ho Yang: KAIST
Maeng-Je Seong: Chung-Ang University
Jin Hong Lee: Korea Institute of Science and Technology (KIST)
Se Young Park: Soongsil University
Jun Woo Choi: Korea Institute of Science and Technology (KIST)

Nature Communications, 2023, vol. 14, issue 1, 1-10

Abstract: Abstract We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe3-xGeTe2 and the ferroelectric In2Se3. It is observed that gate voltages applied to the Fe3-xGeTe2/In2Se3 heterostructure device modulate the magnetic properties of Fe3-xGeTe2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In2Se3 and Fe3-xGeTe2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe3-xGeTe2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.

Date: 2023
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DOI: 10.1038/s41467-023-41382-8

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