Process integration and future outlook of 2D transistors
Kevin P. O’Brien (),
Carl H. Naylor,
Chelsey Dorow,
Kirby Maxey,
Ashish Verma Penumatcha,
Andrey Vyatskikh,
Ting Zhong,
Ande Kitamura,
Sudarat Lee,
Carly Rogan,
Wouter Mortelmans,
Mahmut Sami Kavrik,
Rachel Steinhardt,
Pratyush Buragohain,
Sourav Dutta,
Tristan Tronic,
Scott Clendenning,
Paul Fischer,
Ernisse S. Putna,
Marko Radosavljevic,
Matt Metz and
Uygar Avci
Additional contact information
Kevin P. O’Brien: Components Research
Carl H. Naylor: Components Research
Chelsey Dorow: Components Research
Kirby Maxey: Components Research
Ashish Verma Penumatcha: Components Research
Andrey Vyatskikh: Components Research
Ting Zhong: Components Research
Ande Kitamura: Components Research
Sudarat Lee: Components Research
Carly Rogan: Components Research
Wouter Mortelmans: Components Research
Mahmut Sami Kavrik: Components Research
Rachel Steinhardt: Components Research
Pratyush Buragohain: Components Research
Sourav Dutta: Components Research
Tristan Tronic: Components Research
Scott Clendenning: Components Research
Paul Fischer: Components Research
Ernisse S. Putna: Components Research
Marko Radosavljevic: Components Research
Matt Metz: Components Research
Uygar Avci: Components Research
Nature Communications, 2023, vol. 14, issue 1, 1-5
Abstract:
The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the recent progress in the fabrication of complementary metal-oxide-semiconductor (CMOS) devices based on stacked 2D TMD nanoribbons and specifically highlight issues that still need to be resolved by the 2D community in five crucial research areas: contacts, channel growth, gate oxide, variability, and doping. While 2D TMD transistors have great potential, more research is needed to understand the physical interactions of 2D materials at the atomic scale.
Date: 2023
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-41779-5
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DOI: 10.1038/s41467-023-41779-5
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