CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

Wenhui Wang, Ke Li, Jun Lan, Mei Shen, Zhongrui Wang, Xuewei Feng, Hongyu Yu, Kai Chen, Jiamin Li, Feichi Zhou, Longyang Lin (), Panpan Zhang () and Yida Li ()
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Wenhui Wang: Southern University of Science and Technology
Ke Li: Southern University of Science and Technology
Jun Lan: Southern University of Science and Technology
Mei Shen: Southern University of Science and Technology
Zhongrui Wang: The University of Hong Kong
Xuewei Feng: Shanghai Jiao Tong University
Hongyu Yu: Southern University of Science and Technology
Kai Chen: Southern University of Science and Technology
Jiamin Li: Southern University of Science and Technology
Feichi Zhou: Southern University of Science and Technology
Longyang Lin: Southern University of Science and Technology
Panpan Zhang: Beijing University of Posts and Telecommunications
Yida Li: Southern University of Science and Technology

Nature Communications, 2023, vol. 14, issue 1, 1-11

Abstract: Abstract The development of high-performance oxide-based transistors is critical to enable very large-scale integration (VLSI) of monolithic 3-D integrated circuit (IC) in complementary metal oxide semiconductor (CMOS) backend-of-line (BEOL). Atomic layer deposition (ALD) deposited ZnO is an attractive candidate due to its excellent electrical properties, low processing temperature below copper interconnect thermal budget, and conformal sidewall deposition for novel 3D architecture. An optimized ALD deposited ZnO thin-film transistor achieving a record field-effect and intrinsic mobility (µFE /µo) of 85/140 cm2/V·s is presented here. The ZnO TFT was integrated with HfO2 RRAM in a 1 kbit (32 × 32) 1T1R array, demonstrating functionalities in RRAM switching. In order to co-design for future technology requiring high performance BEOL circuitries implementation, a spice-compatible model of the ZnO TFTs was developed. We then present designs of various ZnO TFT-based inverters, and 5-stage ring oscillators through simulations and experiments with working frequency exceeding 10’s of MHz.

Date: 2023
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DOI: 10.1038/s41467-023-41868-5

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