Colossal negative magnetoresistance in field-induced Weyl semimetal of magnetic half-Heusler compound

Kentaro Ueda (), Tonghua Yu, Motoaki Hirayama, Ryo Kurokawa, Taro Nakajima, Hiraku Saito, Markus Kriener, Manabu Hoshino, Daisuke Hashizume, Taka-hisa Arima, Ryotaro Arita and Yoshinori Tokura
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Kentaro Ueda: University of Tokyo
Tonghua Yu: University of Tokyo
Motoaki Hirayama: University of Tokyo
Ryo Kurokawa: University of Tokyo
Taro Nakajima: RIKEN Center for Emergent Matter Science (CEMS)
Hiraku Saito: University of Tokyo
Markus Kriener: RIKEN Center for Emergent Matter Science (CEMS)
Manabu Hoshino: RIKEN Center for Emergent Matter Science (CEMS)
Daisuke Hashizume: RIKEN Center for Emergent Matter Science (CEMS)
Taka-hisa Arima: RIKEN Center for Emergent Matter Science (CEMS)
Ryotaro Arita: RIKEN Center for Emergent Matter Science (CEMS)
Yoshinori Tokura: University of Tokyo

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract The discovery of topological insulators and semimetals triggered enormous interest in exploring emergent electromagnetic responses in solids. Particular attention has been focused on ternary half-Heusler compounds, whose electronic structure bears analogy to the topological zinc-blende compounds while also including magnetic rare-earth ions coupled to conduction electrons. However, most of the research in this system has been in band-inverted zero-gap semiconductors such as GdPtBi, which still does not fully exhaust the large potential of this material class. Here, we report a less-studied member of half-Heusler compounds, HoAuSn, which we show is a trivial semimetal or narrow-gap semiconductor at zero magnetic field but undergoes a field-induced transition to a Weyl semimetal, with a negative magnetoresistance exceeding four orders of magnitude at low temperatures. The combined study of Shubnikov-de Haas oscillations and first-principles calculation suggests that the exchange field from Ho 4f moments reconstructs the band structure to induce Weyl points which play a key role in the strong suppression of large-angle carrier scattering. Our findings demonstrate the unique mechanism of colossal negative magnetoresistance and provide pathways towards realizing topological electronic states in a large class of magnetic half-Heusler compounds.

Date: 2023
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DOI: 10.1038/s41467-023-41982-4

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