Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array

Sangyong Park, Dongyoung Lee, Juncheol Kang, Hojin Choi and Jin-Hong Park ()
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Sangyong Park: Device Solutions, Samsung Electronics Co. Ltd
Dongyoung Lee: Sungkyunkwan University (SKKU)
Juncheol Kang: Sungkyunkwan University (SKKU)
Hojin Choi: Sungkyunkwan University (SKKU)
Jin-Hong Park: Sungkyunkwan University (SKKU)

Nature Communications, 2023, vol. 14, issue 1, 1-10

Abstract: Abstract In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfer. Nevertheless, it necessitates a high-density memory array to effectively manage large data volumes. Here, we present a stacked ferroelectric memory array comprised of laterally gated ferroelectric field-effect transistors (LG-FeFETs). The interlocking effect of the α-In2Se3 is utilized to regulate the channel conductance. Our study examined the distinctive characteristics of the LG-FeFET, such as a notably wide memory window, effective ferroelectric switching, long retention time (over 3 × 104 seconds), and high endurance (over 105 cycles). This device is also well-suited for implementing vertically stacked structures because decreasing its height can help mitigate the challenges associated with the integration process. We devised a 3D stacked structure using the LG-FeFET and verified its feasibility by performing multiply-accumulate (MAC) operations in a two-tier stacked memory configuration.

Date: 2023
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DOI: 10.1038/s41467-023-41991-3

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