Wafer-scale organic-on-III-V monolithic heterogeneous integration for active-matrix micro-LED displays

Lei Han, Simon Ogier, Jun Li, Dan Sharkey, Xiaokuan Yin, Andrew Baker, Alejandro Carreras, Fangyuan Chang, Kai Cheng and Xiaojun Guo ()
Additional contact information
Lei Han: Shanghai Jiao Tong University
Simon Ogier: Thomas Wright Way
Jun Li: Shanghai Jiao Tong University
Dan Sharkey: Thomas Wright Way
Xiaokuan Yin: Shanghai Jiao Tong University
Andrew Baker: Thomas Wright Way
Alejandro Carreras: Thomas Wright Way
Fangyuan Chang: Shanghai Jiao Tong University
Kai Cheng: Nanopolis Suzhou, 99 Jinji Avenue
Xiaojun Guo: Shanghai Jiao Tong University

Nature Communications, 2023, vol. 14, issue 1, 1-9

Abstract: Abstract The organic thin-film transistor is advantageous for monolithic three-dimensional integration attributed to low temperature and facile solution processing. However, the electrical properties of solution deposited organic semiconductor channels are very sensitive to the substrate surface and processing conditions. An organic-last integration technology is developed for wafer-scale heterogeneous integration of a multi-layer organic material stack from solution onto the non-even substrate surface of a III-V micro light emitting diode plane. A via process is proposed to make the via interconnection after fabrication of the organic thin-film transistor. Low-defect uniform organic semiconductor and dielectric layers can then be formed on top to achieve high-quality interfaces. The resulting organic thin-film transistors exhibit superior performance for driving micro light emitting diode displays, in terms of milliampere driving current, and large ON/OFF current ratio approaching 1010 with excellent uniformity and reliability. Active-matrix micro light emitting diode displays are demonstrated with highest brightness of 150,000 nits and highest resolution of 254 pixels-per-inch.

Date: 2023
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DOI: 10.1038/s41467-023-42443-8

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