Localization and interaction of interlayer excitons in MoSe2/WSe2 heterobilayers

Hanlin Fang (), Qiaoling Lin, Yi Zhang, Joshua Thompson, Sanshui Xiao, Zhipei Sun, Ermin Malic, Saroj P. Dash and Witlef Wieczorek ()
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Hanlin Fang: Chalmers University of Technology
Qiaoling Lin: Technical University of Denmark
Yi Zhang: Aalto University
Joshua Thompson: Philipps-Universität Marburg
Sanshui Xiao: Technical University of Denmark
Zhipei Sun: Aalto University
Ermin Malic: Philipps-Universität Marburg
Saroj P. Dash: Chalmers University of Technology
Witlef Wieczorek: Chalmers University of Technology

Nature Communications, 2023, vol. 14, issue 1, 1-7

Abstract: Abstract Transition metal dichalcogenide (TMD) heterobilayers provide a versatile platform to explore unique excitonic physics via the properties of the constituent TMDs and external stimuli. Interlayer excitons (IXs) can form in TMD heterobilayers as delocalized or localized states. However, the localization of IX in different types of potential traps, the emergence of biexcitons in the high-excitation regime, and the impact of potential traps on biexciton formation have remained elusive. In our work, we observe two types of potential traps in a MoSe2/WSe2 heterobilayer, which result in significantly different emission behavior of IXs at different temperatures. We identify the origin of these traps as localized defect states and the moiré potential of the TMD heterobilayer. Furthermore, with strong excitation intensity, a superlinear emission behavior indicates the emergence of interlayer biexcitons, whose formation peaks at a specific temperature. Our work elucidates the different excitation and temperature regimes required for the formation of both localized and delocalized IX and biexcitons and, thus, contributes to a better understanding and application of the rich exciton physics in TMD heterostructures.

Date: 2023
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DOI: 10.1038/s41467-023-42710-8

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