Intrinsic room-temperature ferromagnetism in a two-dimensional semiconducting metal-organic framework

Sihua Feng, Hengli Duan (), Hao Tan, Fengchun Hu, Chaocheng Liu, Yao Wang, Zhi Li, Liang Cai, Yuyang Cao, Chao Wang (), Zeming Qi, Li Song, Xuguang Liu, Zhihu Sun and Wensheng Yan ()
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Sihua Feng: University of Science and Technology of China
Hengli Duan: University of Science and Technology of China
Hao Tan: University of Science and Technology of China
Fengchun Hu: University of Science and Technology of China
Chaocheng Liu: University of Science and Technology of China
Yao Wang: University of Science and Technology of China
Zhi Li: University of Science and Technology of China
Liang Cai: University of Science and Technology of China
Yuyang Cao: University of Science and Technology of China
Chao Wang: University of Science and Technology of China
Zeming Qi: University of Science and Technology of China
Li Song: University of Science and Technology of China
Xuguang Liu: University of Science and Technology of China
Zhihu Sun: University of Science and Technology of China
Wensheng Yan: University of Science and Technology of China

Nature Communications, 2023, vol. 14, issue 1, 1-9

Abstract: Abstract The development of two-dimensional (2D) magnetic semiconductors with room-temperature ferromagnetism is a significant challenge in materials science and is important for the development of next-generation spintronic devices. Herein, we demonstrate that a 2D semiconducting antiferromagnetic Cu-MOF can be endowed with intrinsic room-temperature ferromagnetic coupling using a ligand cleavage strategy to regulate the inner magnetic interaction within the Cu dimers. Using the element-selective X-ray magnetic circular dichroism (XMCD) technique, we provide unambiguous evidence for intrinsic ferromagnetism. Exhaustive structural characterizations confirm that the change of magnetic coupling is caused by the increased distance between Cu atoms within a Cu dimer. Theoretical calculations reveal that the ferromagnetic coupling is enhanced with the increased Cu-Cu distance, which depresses the hybridization between 3d orbitals of nearest Cu atoms. Our work provides an effective avenue to design and fabricate MOF-based semiconducting room-temperature ferromagnetic materials and promotes their practical applications in next-generation spintronic devices.

Date: 2023
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DOI: 10.1038/s41467-023-42844-9

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