Metal-free photoanodes for C–H functionalization

Junfang Zhang, Yuntao Zhu, Christian Njel, Yuxin Liu, Pietro Dallabernardina, Molly M. Stevens, Peter H. Seeberger, Oleksandr Savateev () and Felix F. Loeffler ()
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Junfang Zhang: Max Planck Institute of Colloids and Interfaces
Yuntao Zhu: Max Planck Institute of Colloids and Interfaces
Christian Njel: Karlsruhe Institute of Technology (KIT)
Yuxin Liu: Max Planck Institute of Colloids and Interfaces
Pietro Dallabernardina: Max Planck Institute of Colloids and Interfaces
Molly M. Stevens: Imperial College London
Peter H. Seeberger: Max Planck Institute of Colloids and Interfaces
Oleksandr Savateev: Max Planck Institute of Colloids and Interfaces
Felix F. Loeffler: Max Planck Institute of Colloids and Interfaces

Nature Communications, 2023, vol. 14, issue 1, 1-9

Abstract: Abstract Organic semiconductors, such as carbon nitride, when employed as powders, show attractive photocatalytic properties, but their photoelectrochemical performance suffers from low charge transport capability, charge carrier recombination, and self-oxidation. High film-substrate affinity and well-designed heterojunction structures may address these issues, achieved through advanced film generation techniques. Here, we introduce a spin coating pretreatment of a conductive substrate with a multipurpose polymer and a supramolecular precursor, followed by chemical vapor deposition for the synthesis of dual-layer carbon nitride photoelectrodes. These photoelectrodes are composed of a porous microtubular top layer and an interlayer between the porous film and the conductive substrate. The polymer improves the polymerization degree of carbon nitride and introduces C-C bonds to increase its electrical conductivity. These carbon nitride photoelectrodes exhibit state-of-the-art photoelectrochemical performance and achieve high yield in C-H functionalization. This carbon nitride photoelectrode synthesis strategy may be readily adapted to other reported processes to optimize their performance.

Date: 2023
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DOI: 10.1038/s41467-023-42851-w

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