Universal selective transfer printing via micro-vacuum force

Sang Hyun Park, Tae Jin Kim, Han Eol Lee, Boo Soo Ma, Myoung Song, Min Seo Kim, Jung Ho Shin, Seung Hyung Lee, Jae Hee Lee, Young Bin Kim, Ki Yun Nam, Hong-Jin Park, Taek-Soo Kim and Keon Jae Lee ()
Additional contact information
Sang Hyun Park: Korea Advanced Institute of Science and Technology (KAIST)
Tae Jin Kim: Korea Advanced Institute of Science and Technology (KAIST)
Han Eol Lee: Jeonbuk National University
Boo Soo Ma: Korea Advanced Institute of Science and Technology (KAIST)
Myoung Song: Korea Advanced Institute of Science and Technology (KAIST)
Min Seo Kim: Korea Advanced Institute of Science and Technology (KAIST)
Jung Ho Shin: Korea Advanced Institute of Science and Technology (KAIST)
Seung Hyung Lee: Korea Advanced Institute of Science and Technology (KAIST)
Jae Hee Lee: Korea Advanced Institute of Science and Technology (KAIST)
Young Bin Kim: Korea Advanced Institute of Science and Technology (KAIST)
Ki Yun Nam: Korea Advanced Institute of Science and Technology (KAIST)
Hong-Jin Park: BSP Co., Ltd., 41-4
Taek-Soo Kim: Korea Advanced Institute of Science and Technology (KAIST)
Keon Jae Lee: Korea Advanced Institute of Science and Technology (KAIST)

Nature Communications, 2023, vol. 14, issue 1, 1-11

Abstract: Abstract Transfer printing of inorganic thin-film semiconductors has attracted considerable attention to realize high-performance soft electronics on unusual substrates. However, conventional transfer technologies including elastomeric transfer printing, laser-assisted transfer, and electrostatic transfer still have challenging issues such as stamp reusability, additional adhesives, and device damage. Here, a micro-vacuum assisted selective transfer is reported to assemble micro-sized inorganic semiconductors onto unconventional substrates. 20 μm-sized micro-hole arrays are formed via laser-induced etching technology on a glass substrate. The vacuum controllable module, consisting of a laser-drilled glass and hard-polydimethylsiloxane micro-channels, enables selective modulation of micro-vacuum suction force on microchip arrays. Ultrahigh adhesion switchability of 3.364 × 106, accomplished by pressure control during the micro-vacuum transfer procedure, facilitates the pick-up and release of thin-film semiconductors without additional adhesives and chip damage. Heterogeneous integration of III-V materials and silicon is demonstrated by assembling microchips with diverse shapes and sizes from different mother wafers on the same plane. Multiple selective transfers are implemented by independent pressure control of two separate vacuum channels with a high transfer yield of 98.06%. Finally, flexible micro light-emitting diodes and transistors with uniform electrical/optical properties are fabricated via micro-vacuum assisted selective transfer.

Date: 2023
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DOI: 10.1038/s41467-023-43342-8

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