High-performance van der Waals antiferroelectric CuCrP2S6-based memristors
Yinchang Ma,
Yuan Yan,
Linqu Luo,
Sebastian Pazos,
Chenhui Zhang,
Xiang Lv,
Maolin Chen,
Chen Liu,
Yizhou Wang,
Aitian Chen,
Yan Li,
Dongxing Zheng,
Rongyu Lin,
Hanin Algaidi,
Minglei Sun,
Jefferson Zhe Liu,
Shaobo Tu,
Husam N. Alshareef,
Cheng Gong,
Mario Lanza,
Fei Xue () and
Xixiang Zhang ()
Additional contact information
Yinchang Ma: King Abdullah University of Science and Technology
Yuan Yan: The University of Melbourne
Linqu Luo: King Abdullah University of Science and Technology
Sebastian Pazos: King Abdullah University of Science and Technology
Chenhui Zhang: King Abdullah University of Science and Technology
Xiang Lv: Sichuan University
Maolin Chen: King Abdullah University of Science and Technology
Chen Liu: King Abdullah University of Science and Technology
Yizhou Wang: King Abdullah University of Science and Technology
Aitian Chen: King Abdullah University of Science and Technology
Yan Li: King Abdullah University of Science and Technology
Dongxing Zheng: King Abdullah University of Science and Technology
Rongyu Lin: King Abdullah University of Science and Technology
Hanin Algaidi: King Abdullah University of Science and Technology
Minglei Sun: King Abdullah University of Science and Technology
Jefferson Zhe Liu: The University of Melbourne
Shaobo Tu: King Abdullah University of Science and Technology
Husam N. Alshareef: King Abdullah University of Science and Technology
Cheng Gong: University of Maryland
Mario Lanza: King Abdullah University of Science and Technology
Fei Xue: Zhejiang University
Xixiang Zhang: King Abdullah University of Science and Technology
Nature Communications, 2023, vol. 14, issue 1, 1-11
Abstract:
Abstract Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor thermal stability (
Date: 2023
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DOI: 10.1038/s41467-023-43628-x
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