Operando dynamics of trapped carriers in perovskite solar cells observed via infrared optical activation spectroscopy

Jiaxin Pan, Ziming Chen (), Tiankai Zhang, Beier Hu, Haoqing Ning, Zhu Meng, Ziyu Su, Davide Nodari, Weidong Xu, Ganghong Min, Mengyun Chen, Xianjie Liu, Nicola Gasparini, Saif A. Haque, Piers R. F. Barnes, Feng Gao and Artem A. Bakulin
Additional contact information
Jiaxin Pan: Imperial College London
Ziming Chen: Imperial College London
Tiankai Zhang: Linköping University
Beier Hu: Imperial College London
Haoqing Ning: Imperial College London
Zhu Meng: Imperial College London
Ziyu Su: Imperial College London
Davide Nodari: Imperial College London
Weidong Xu: Imperial College London
Ganghong Min: Imperial College London
Mengyun Chen: Linköping University
Xianjie Liu: Linköping University
Nicola Gasparini: Imperial College London
Saif A. Haque: Imperial College London
Piers R. F. Barnes: Imperial College London
Feng Gao: Linköping University
Artem A. Bakulin: Imperial College London

Nature Communications, 2023, vol. 14, issue 1, 1-10

Abstract: Abstract Conventional spectroscopies are not sufficiently selective to comprehensively understand the behaviour of trapped carriers in perovskite solar cells, particularly under their working conditions. Here we use infrared optical activation spectroscopy (i.e., pump-push-photocurrent), to observe the properties and real-time dynamics of trapped carriers within operando perovskite solar cells. We compare behaviour differences of trapped holes in pristine and surface-passivated FA0.99Cs0.01PbI3 devices using a combination of quasi-steady-state and nanosecond time-resolved pump-push-photocurrent, as well as kinetic and drift-diffusion models. We find a two-step trap-filling process: the rapid filling (~10 ns) of low-density traps in the bulk of perovskite, followed by the slower filling (~100 ns) of high-density traps at the perovskite/hole transport material interface. Surface passivation by n-octylammonium iodide dramatically reduces the number of trap states (~50 times), improving the device performance substantially. Moreover, the activation energy (~280 meV) of the dominant hole traps remains similar with and without surface passivation.

Date: 2023
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DOI: 10.1038/s41467-023-43852-5

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