Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4

Wenxuan Zhao, Ming Yang, Runzhe Xu, Xian Du, Yidian Li, Kaiyi Zhai, Cheng Peng, Ding Pei, Han Gao, Yiwei Li, Lixuan Xu, Junfeng Han, Yuan Huang, Zhongkai Liu, Yugui Yao, Jincheng Zhuang, Yi Du (), Jinjian Zhou (), Yulin Chen () and Lexian Yang ()
Additional contact information
Wenxuan Zhao: Tsinghua University
Ming Yang: Beihang University
Runzhe Xu: Tsinghua University
Xian Du: Tsinghua University
Yidian Li: Tsinghua University
Kaiyi Zhai: Tsinghua University
Cheng Peng: University of Oxford
Ding Pei: University of Oxford
Han Gao: ShanghaiTech University and CAS-Shanghai Science Research Center
Yiwei Li: ShanghaiTech University and CAS-Shanghai Science Research Center
Lixuan Xu: Tsinghua University
Junfeng Han: Beijing Institute of Technology
Yuan Huang: Beijing Institute of Technology
Zhongkai Liu: ShanghaiTech University and CAS-Shanghai Science Research Center
Yugui Yao: Beijing Institute of Technology
Jincheng Zhuang: Beihang University
Yi Du: Beihang University
Jinjian Zhou: Beijing Institute of Technology
Yulin Chen: University of Oxford
Lexian Yang: Tsinghua University

Nature Communications, 2023, vol. 14, issue 1, 1-7

Abstract: Abstract The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements with submicron spatial and spin resolution, we systematically investigate the electronic structure and spin texture of quasi-one-dimensional (1D) HOTI candidate Bi4Br4. In contrast to the bulk-state-dominant spectra on the (001) surface, we observe gapped surface states on the (100) surface, whose dispersion and spin-polarization agree well with our ab-initio calculations. Moreover, we reveal in-gap states connecting the surface valence and conduction bands, which is a signature of the hinge states inside the (100) surface gap. Our findings provide compelling evidence for the HOTI phase of Bi4Br4. The identification of the higher-order topological phase promises applications based on 1D spin-momentum locked current in electronic and spintronic devices.

Date: 2023
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DOI: 10.1038/s41467-023-43882-z

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