In-plane charged antiphase boundary and 180° domain wall in a ferroelectric film

Xiangbin Cai (), Chao Chen, Lin Xie, Changan Wang, Zixin Gui, Yuan Gao, Ulrich Kentsch, Guofu Zhou, Xingsen Gao, Yu Chen, Shengqiang Zhou, Weibo Gao, Jun-Ming Liu, Ye Zhu and Deyang Chen ()
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Xiangbin Cai: South China Normal University
Chao Chen: South China Normal University
Lin Xie: Southern University of Science and Technology
Changan Wang: Institute of Ion Beam Physics and Materials Research
Zixin Gui: South China Normal University
Yuan Gao: Peking University
Ulrich Kentsch: Institute of Ion Beam Physics and Materials Research
Guofu Zhou: South China Normal University
Xingsen Gao: South China Normal University
Yu Chen: Chinese Academy of Sciences
Shengqiang Zhou: Institute of Ion Beam Physics and Materials Research
Weibo Gao: Nanyang Technological University
Jun-Ming Liu: South China Normal University
Ye Zhu: The Hong Kong Polytechnic University
Deyang Chen: South China Normal University

Nature Communications, 2023, vol. 14, issue 1, 1-8

Abstract: Abstract The deterministic creation and modification of domain walls in ferroelectric films have attracted broad interest due to their unprecedented potential as the active element in non-volatile memory, logic computation and energy-harvesting technologies. However, the correlation between charged and antiphase states, and their hybridization into a single domain wall still remain elusive. Here we demonstrate the facile fabrication of antiphase boundaries in BiFeO3 thin films using a He-ion implantation process. Cross-sectional electron microscopy, spectroscopy and piezoresponse force measurement reveal the creation of a continuous in-plane charged antiphase boundaries around the implanted depth and a variety of atomic bonding configurations at the antiphase interface, showing the atomically sharp 180° polarization reversal across the boundary. Therefore, this work not only inspires a domain-wall fabrication strategy using He-ion implantation, which is compatible with the wafer-scale patterning, but also provides atomic-scale structural insights for its future utilization in domain-wall nanoelectronics.

Date: 2023
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DOI: 10.1038/s41467-023-44091-4

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