Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

Xiangjin Wu, Asir Intisar Khan, Hengyuan Lee, Chen-Feng Hsu, Huairuo Zhang, Heshan Yu, Neel Roy, Albert V. Davydov, Ichiro Takeuchi, Xinyu Bao, H.-S. Philip Wong and Eric Pop ()
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Xiangjin Wu: Stanford University
Asir Intisar Khan: Stanford University
Hengyuan Lee: Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC)
Chen-Feng Hsu: Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC)
Huairuo Zhang: Materials Science and Engineering Division, National Institute of Standards and Technology
Heshan Yu: University of Maryland
Neel Roy: Stanford University
Albert V. Davydov: Materials Science and Engineering Division, National Institute of Standards and Technology
Ichiro Takeuchi: University of Maryland
Xinyu Bao: Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC)
H.-S. Philip Wong: Stanford University
Eric Pop: Stanford University

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Data-centric applications are pushing the limits of energy-efficiency in today’s computing systems, including those based on phase-change memory (PCM). This technology must achieve low-power and stable operation at nanoscale dimensions to succeed in high-density memory arrays. Here we use a novel combination of phase-change material superlattices and nanocomposites (based on Ge4Sb6Te7), to achieve record-low power density ≈ 5 MW/cm2 and ≈ 0.7 V switching voltage (compatible with modern logic processors) in PCM devices with the smallest dimensions to date (≈ 40 nm) for a superlattice technology on a CMOS-compatible substrate. These devices also simultaneously exhibit low resistance drift with 8 resistance states, good endurance (≈ 2 × 108 cycles), and fast switching (≈ 40 ns). The efficient switching is enabled by strong heat confinement within the superlattice materials and the nanoscale device dimensions. The microstructural properties of the Ge4Sb6Te7 nanocomposite and its high crystallization temperature ensure the fast-switching speed and stability in our superlattice PCM devices. These results re-establish PCM technology as one of the frontrunners for energy-efficient data storage and computing.

Date: 2024
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DOI: 10.1038/s41467-023-42792-4

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