Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

Kun Peng, Nicholas Paul Morgan, Ford M. Wagner, Thomas Siday, Chelsea Qiushi Xia, Didem Dede, Victor Boureau, Valerio Piazza, Anna Fontcuberta i Morral () and Michael B. Johnston ()
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Kun Peng: University of Oxford, Clarendon Laboratory
Nicholas Paul Morgan: Institute of Materials, EPFL
Ford M. Wagner: University of Oxford, Clarendon Laboratory
Thomas Siday: University of Oxford, Clarendon Laboratory
Chelsea Qiushi Xia: University of Oxford, Clarendon Laboratory
Didem Dede: Institute of Materials, EPFL
Victor Boureau: Interdisciplinary Centre for Electron Microscopy, EPFL
Valerio Piazza: Institute of Materials, EPFL
Anna Fontcuberta i Morral: Institute of Materials, EPFL
Michael B. Johnston: University of Oxford, Clarendon Laboratory

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodity. In this work we demonstrate scalable photoconductive THz receivers based on horizontally-grown InAs nanowires (NWs) embedded in a bow-tie antenna that work at room temperature. The NWs provide a short photoconductivity lifetime while conserving high electron mobility. The large surface-to-volume ratio also ensures low dark current and thus low thermal noise, compared to narrow-bandgap bulk devices. By engineering the NW morphology, the NWs exhibit greatly different photoconductivity lifetimes, enabling the receivers to detect THz photons via both direct and integrating sampling modes. The broadband NW receivers are compatible with gating lasers across the entire range of telecom wavelengths (1.2–1.6 μm) and thus are ideal for inexpensive all-optical fibre-based THz time-domain spectroscopy and imaging systems. The devices are deterministically positioned by lithography and thus scalable to the wafer scale, opening the path for a new generation of commercial THz receivers.

Date: 2024
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DOI: 10.1038/s41467-023-44345-1

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