A ferroelectric fin diode for robust non-volatile memory

Guangdi Feng, Qiuxiang Zhu, Xuefeng Liu, Luqiu Chen, Xiaoming Zhao, Jianquan Liu, Shaobing Xiong, Kexiang Shan, Zhenzhong Yang, Qinye Bao, Fangyu Yue, Hui Peng, Rong Huang, Xiaodong Tang, Jie Jiang, Wei Tang, Xiaojun Guo, Jianlu Wang, Anquan Jiang, Brahim Dkhil, Bobo Tian (), Junhao Chu and Chungang Duan
Additional contact information
Guangdi Feng: East China Normal University
Qiuxiang Zhu: East China Normal University
Xuefeng Liu: East China Normal University
Luqiu Chen: East China Normal University
Xiaoming Zhao: East China Normal University
Jianquan Liu: East China Normal University
Shaobing Xiong: East China Normal University
Kexiang Shan: Central South University
Zhenzhong Yang: East China Normal University
Qinye Bao: East China Normal University
Fangyu Yue: East China Normal University
Hui Peng: East China Normal University
Rong Huang: East China Normal University
Xiaodong Tang: East China Normal University
Jie Jiang: Central South University
Wei Tang: Shanghai Jiao Tong University
Xiaojun Guo: Shanghai Jiao Tong University
Jianlu Wang: Fudan University
Anquan Jiang: Fudan University
Brahim Dkhil: Université Paris-Saclay, CentraleSupélec, CNRS-UMR8580, Laboratoire SPMS
Bobo Tian: East China Normal University
Junhao Chu: East China Normal University
Chungang Duan: East China Normal University

Nature Communications, 2024, vol. 15, issue 1, 1-11

Abstract: Abstract Among today’s nonvolatile memories, ferroelectric-based capacitors, tunnel junctions and field-effect transistors (FET) are already industrially integrated and/or intensively investigated to improve their performances. Concurrently, because of the tremendous development of artificial intelligence and big-data issues, there is an urgent need to realize high-density crossbar arrays, a prerequisite for the future of memories and emerging computing algorithms. Here, a two-terminal ferroelectric fin diode (FFD) in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top and bottom electrodes is designed. Such a device not only shows both digital and analog memory functionalities but is also robust and universal as it works using two very different ferroelectric materials. When compared to all current nonvolatile memories, it cumulatively demonstrates an endurance up to 1010 cycles, an ON/OFF ratio of ~102, a feature size of 30 nm, an operating energy of ~20 fJ and an operation speed of 100 ns. Beyond these superior performances, the simple two-terminal structure and their self-rectifying ratio of ~ 104 permit to consider them as new electronic building blocks for designing passive crossbar arrays which are crucial for the future in-memory computing.

Date: 2024
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DOI: 10.1038/s41467-024-44759-5

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