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High-speed and energy-efficient non-volatile silicon photonic memory based on heterogeneously integrated memresonator

Bassem Tossoun (), Di Liang, Stanley Cheung, Zhuoran Fang, Xia Sheng, John Paul Strachan and Raymond G. Beausoleil
Additional contact information
Bassem Tossoun: Hewlett Packard Enterprise
Di Liang: Hewlett Packard Enterprise
Stanley Cheung: Hewlett Packard Enterprise
Zhuoran Fang: Hewlett Packard Enterprise
Xia Sheng: Hewlett Packard Enterprise
John Paul Strachan: Hewlett Packard Enterprise
Raymond G. Beausoleil: Hewlett Packard Enterprise

Nature Communications, 2024, vol. 15, issue 1, 1-8

Abstract: Abstract Recently, interest in programmable photonics integrated circuits has grown as a potential hardware framework for deep neural networks, quantum computing, and field programmable arrays (FPGAs). However, these circuits are constrained by the limited tuning speed and large power consumption of the phase shifters used. In this paper, we introduce the memresonator, a metal-oxide memristor heterogeneously integrated with a microring resonator, as a non-volatile silicon photonic phase shifter. These devices are capable of retention times of 12 hours, switching voltages lower than 5 V, and an endurance of 1000 switching cycles. Also, these memresonators have been switched using 300 ps long voltage pulses with a record low switching energy of 0.15 pJ. Furthermore, these memresonators are fabricated on a heterogeneous III-V-on-Si platform capable of integrating a rich family of active and passive optoelectronic devices directly on-chip to enable in-memory photonic computing and further advance the scalability of integrated photonic processors.

Date: 2024
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DOI: 10.1038/s41467-024-44773-7

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